Publications: The Interdisciplinary Center for Wide Bandgap Semiconductors and The Solid State Lighting and Display Center

The Interdisciplinary Center for
Wide Bandgap Semiconductors
and
The Solid State Lighting & Display Center

P u b l i c a t i o n s
( 2 0 0 5 )

[ 2005] [ 2004] [ 2003 ] [ 2002 ] [ 2001 ] [ 2000 ] [ 1999 ] [ 1998 ] [ 1997 ] [ 1996 ] [ 1995 - 1991 ]

"LiNbO/sub 3/ thin film growth on (0001)-GaN" P.J. Hansen, Y. Terao, Yuan Wu, R.A. York, U.K. Mishra, J.S. Speck. Journal of Vacuum Science & Technology B Microelectronics & Nanometer Structures Processing Measurement & Phenomena, 23, pp.162-167. (2005).
"Limiting factors of room-temperature nonradiative photoluminescence lifetime in polar and nonpolar GaN studied by time-resolved photoluminescence and slow positron annihilation techniques" S.F. Chichibu, A. Uedono, T. Onuma, T. Sota, B.A. Haskell, S.P. DenBaars, J.S. Speck, S. Nakamura. Applied Physics Letters, 86, pp.21914-1-21914-3. (2005).
"Buried stressors in nitride semiconductors: influence on electronic properties" A.E. Romanov, P. Waltereit, J.S. Speck. Journal of Applied Physics, 97, pp.43708-1-43708-13. (2005).
"Continuous evolution of Ga adlayer coverages during plasma-assisted molecular-beam epitaxy of (0001) GaN" G. Koblmuller, J. Brown, R. Averbeck, H. Riechert, P. Pongratz, J.S. Speck. Applied Physics Letters, 86, pp.41908-1-41908-3. (2005).
"Influence of epitaxial structure in the noise figure of AlGaN/GaN HEMTs" C. Sanabria, Hongtao Xu, T. Palacios, A. Chakraborty, S. Heikman, U.K. Mishra, R.A.York. IEEE Transactions on Microwave Theory & Techniques, 53, pp.762-769. (2005).
"Properties of nonpolar a-plane InGaN/GaN multiple quantum wells grown on lateral epitaxially overgrown a-plane GaN" A. Chakraborty, S. Keller, C. Meier, B.A. Haskell, P. Waltereit, S.P. DenBaars, S. Nakamura, J.S. Speck, U.K. Mishra. Applied Physics Letters, 86, pp.31901-1-31901-3. (2005).
"Measurement of second order susceptibilities of GaN and AlGaN" N.A.Sanford, A.V.Davydov, D.V.Tsvetkov, A.V. Dmitriev, S. Keller, U.K. Mishra, S.P. DenBaars, S.S. Park, J.Y. Han, R.J. Molnar. Journal of Applied Physics, 97, pp.53512-1-53512-13. (2005).
"Defect reduction in (1100) m-plane gallium nitride via lateral epitaxial overgrowth by hydride vapor phase epitaxy" B.A.Haskell, T.J. Baker, M.B. McLaurin, F. Wu, P.T. Fini, S.P. DenBaars, J.S. Speck, S. Nakamur. Applied Physics Letters, 86, pp.111917-1-111917-3. (2005).
"Rutile films grown by molecular beam epitaxy on GaN and AlGaN/GaN" P.J. Hansen, V. Vaithyanathan, Y. Wu, T. Mates, S. Heikman, U.K. Mishra, R.A. York, D.G. Schlom, J.S. Speck. Journal of Vacuum Science & Technology B Microelectronics & Nanometer Structures Processing Measurement & Phenomena, 23, pp.499-506. (2005).
"Continuous evolution of Ga adlayer coverages during plasma-assisted molecular-beam epitaxy of (0001) GaN" G. Koblmuller, J. Brown, R. Averbeck, H. Riechert, P. Pongratz, J.S. Speck JS. Applied Physics Letters, 86, pp.41908-1-41908-3. (2005).

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