Publications: The Interdisciplinary Center for Wide Bandgap Semiconductors and The Solid State Lighting and Display Center

The Interdisciplinary Center for
Wide Bandgap Semiconductors
and
The Solid State Lighting & Display Center

P u b l i c a t i o n s
( 2 0 0 1 )

[ 2004 ] [ 2003 ] [ 2002 ] [ 2001 ] [ 2000 ] [ 1999 ] [ 1998 ] [ 1997 ] [ 1996 ] [ 1995 - 1991 ]

"High UV/solar rejection ratios in GaN/AlGaN/GaN p-i-n photodiodes" D. L. Pulfrey, J. J. Kuek, M. P. Leslie, B. D. Nener, G. Parish, U. K. Mishra. IEEE Transactions on Electron Devices, 48, pp. 486-489, (2001).
"Very-high power density AlGaN/GaN HEMTs" Y. F. Wu, D. Kapolnek, J. P. Ibbetson, P. Parikh, B. P. Keller, U. K. Mishra. IEEE Transactions on Electron Devices, 48, pp. 586-590, (2001).
"Current instabilities in GaN-based devices" I. Daumiller, D. Theron, C. Gaquiere, A. Vescan, R. Dietrich, A. Wieszt, H. Leier, R. Vetury, U. K. Mishra, I. P. Smorchkova, S. Keller, C. Nguyen, E. Kohn. IEEE Electron Device Letters, 22, pp. 62-64, (2001).
"Observation of Mg-rich precipitates in the p-type doping of GaN-based laser diodes" M. Hansen, L. F. Chen, J. S. Speck, S. P. DenBaars. Physica Status Solidi B, 228, pp. 353-356, (2001).
"Radiative and nonradiative exciton lifetimes in GaN grown by molecular beam epitaxy" G. Pozina, J. P. Bergman, B. Monemar, B. Heying, J. S. Speck. Physica Status Solidi B, 228, pp. 485-488, (2001).
"Mass transport regrowth of GaN for ohmic contacts to AlGaN/GaN" S. Heikman, S. Keller, S. P. DenBaars, U. K. Mishra. Physics Letters, 78, pp. 2876-2878, (2001).
"Carrier trapping and recombination at point defects and dislocations in MOCVD n-GaN" A. Hierro, M. Hansen, J. J. Boeckl, L. Zhao, J. S. Speck, U. K. Mishra, S. P. DenBaars, S. A. Ringel. Physica Status Solidi B, 228, pp. 937-946, (2001).
"Solar-blind p-GaN/i-AlGaN/n-AlGaN ultraviolet photodiodes on SiC substrate" G. Parish, M. Hansen, B. Moran, S. Keller, S. P. DenBaars, U. K. Mishra. Physica Status Solidi A, 188, pp. 297-300, (2001).
"Kilovolt AlGaN/GaN HEMTs as switching devices" N. Q. Zhang, B. Moran, S. P. DenBaars, U. K. Mishra, X. W. Wang, T. P. Ma. Status Solidi A, 188, pp. 213-217, (2001).
"Time-resolved photoluminescence of InxGa1-xN/GaN multiple quantum well structures: Effect of Si doping in the barriers" C. K. Choi, Y. H. Kwon, B. D. Little, G. H. Gainer, J. J. Song, Y. C. Chang, S. Keller, U. K. Mishra, S. P. DenBaars. Phyiscal Review B, 6424, pp. U608-U613, (2001).
"Photoelectrochemical undercut etching for fabrication of GaN microelectrochemical systems" A. R. Stonas, N. C. MacDonald, K. L. Turner, S. P. DenBaars, E. L. Hu. J. Vacuum Sicence & Technology B, 19, pp. 2838-2841, (2001).
"Temperature dependent photoluminescence of MBE grown gallium nitride quantum dots" J. Brown, C. Elsass, C. Poblenz, P. M. Petroff, J. S. Speck. Physica Status Solidi B, 228, pp. 199-202, (2001).
"Generation of coherent acoustic phonons in strained GaN thin films" Y. K. Huang, G. W. Chern, C. K. Sun, Y. Smorchkova, S. Keller, U. Mishra, S. P. DenBaars. Applied Physics Letters, 79, pp. 3361-3363, (2001).
"Indium -surfectant-assisted growth of high-mobility AlN/GaN multilayer structures by metalorganic chemical vapor deposition" S. Keller, S. Heikman, I. Ben-Yaacov, L. Shen, S. P. DenBaars, U. K. Mishra. Applied Physics Letters, 79, pp. 3449-3451, (2001).
"Band gap bowing and exciton localization in strained cubic InxGa1-xN films grown on 3C-SiC (001) by rf molecular-beam epitaxy" S. F. Chichibu, M. Sugiyama, T. Kuroda, A. Tackeuchi, T. Kitamura, H. Nakanishi, T. Sota, S. P. DenBaars, S. Nakamura, Y. Ishida, H. Okumura. Applied Physics Letters, 90, pp. 3600-3602, (2001).
"AlN/GaN and (Al,Ga)N/AlN/GaN two-dimensional electron gas structures grown by plasma-assisted molecular-beam epitaxy" I. P. Smorchkova, L. Chen, T. Mates, L. Shen, S. Heikman, B. Moran, S. Keller, S. P. DenBaars, J. S. Speck, U. K. Mishra. Journal of Applied Physics, 90, pp. 5196-5201, (2001).
"Capture kinetics of electron traps in MBE-grown n-GaN" A. Hierro, A. R. Arehart, B. Heying, M. Hansen, J. S. Speck, U. K. Mishra, S. P. DenBaars, S. A. Ringel. Physica Status Solidi B, 228, pp. 309-313, (2001).
"Relation between structural parameters and the effective electron-hole separation in InGaN/GaN quantum wells" N. A. Shapiro, H. Feick, N. F. Gardner, W. K. Gotz, P. Waltereit, J. S. Speck, E. R. Weber. Physica Status Solidi B, 228, pp. 147-151, (2001).
"Observation of crystallographic wing tilt in cantilever epitaxy of GaN on silicon carbide and silicon (111) substrates" T. M. Katona, M. D. Craven, P. T. Fini, J. S. Speck, S. P. DenBaars. Appl. Phys. Lett., 79, pp. 2907-2909, (2001).
"Influence of growth temperature and thickness of AlGaN caps on electron transport in AlGaN/GaN heterostructures grown by plasma-assisted molecular beam epitaxy" C. R. Elsass, C. Poblenz, B. Heying, P. M. Petroff, S. P. DenBaars, U. K. Mishra, J. S. Speck, A. Saxler, S. Elhamrib, W. C. Mitchel. Jpn. J. Appl. Phys., 40, pp. 6235-6238, (2001).
"Infrared and Raman-scattering studies in single-crystalline GaN nanowires" H. L. Liu, C. C. Chen, C. T. Chia, C. C. Yeh, C. H . Chen, M. Y. Yu, S. Keller, S. P. DenBaars. Chemical Physics Letters, 345, pp. 245-251, (2001).
"AlGaN/AlN/GaN high-power microwave HEMT" L. Shen, S. Heikman, B. Moran, R. Coffie, N. Q. Zhang, D. Buttari, I. P. Smorchkova, S. Keller, S. P. DenBaars, U. K. Mishra. IEEE Electron Device Letters, 22, pp. 457-459, (2001).
"Influence of Ga flux on the growth and electron transport properties of AlGaN/GaN heterostructures grown by plasma-assisted molecular beam epitaxy" C. R. Elsass, C. Poblenz, B. Heying, P. Fini, P. M. Petroff, S. P. DenBaars, U. K. Mishra, J. S. Speck. Journal of Crystal Growth, 233, pp. 709-716, (2001).
"Localized variations in electronic structure of AlGaN/GaN heterostructures grown by molecular-beam epitaxy" K. V. Smith, E. T. Yu, C. R. Elsass, B. Heying, J. S. Speck. Applied Physics Letters, 79, pp. 2749-2751, (2001).
"Influence of pressure on the optical properties of InxGa1-xN epilayers and quantum structures" P. Perlin, I. Gorcyzca, T. Suski, P. Wisniewski, S. Lepkowski, N. E. Christensen, A. Svane, M. Hansen, S. P. DenBaars, B. Damilano, N. Grandjean, J. Massies. Physical Review B, 64, pp. U459-U466, (2001).
"Gallium nitride based transistors" H. Xing, S. Keller, Y. F. Wu, L. McCarthy, I. P. Smorchkova, D. Buttari, R. Coffie, D. S. Green, G. Parish, S. Heikman, L. Shen, N. Zhang, J. J. Xu, B. P. Keller, S. P. DenBaars, U. K. Mishra. Journal of Physics-Condensed Matter, 13, pp. 7139-7157, (2001).
"Growth of epitaxial GaN on LiGaO2 substrates via a reaction with ammonia" D. Kisalius, F. F. Lange. Journal of Materials Research, 16, pp. 2077-2081, (2001).
"Characterization of individual threading dislocations in GaN using ballistic electron emission microscopy" H. J. Im, Y. Ding, J. P. Pelz, B. Heying, J. S. Speck. Physical Review Letters, 8710, pp. U94-U96 (2001).
"Modeling of threading dislocation reduction in growing GaN layers" S. K. Mathis, A. E. Romanov, L. F. Chen, G. E. Beltz, W. Pompe, J. S. Speck. Journal of Crystal Growth, 231, pp. 371-390, (2001).
"Selective area mass transport regrowth of gallium nitride" S. Heikman, S. P. DenBaars, U. K. Mishra. Japanese Journal of Applied Physics, Part 1, 40, pp. 565-566, (2001).
"Piezoelectric-field-enhanced lateral ambipolar diffusion coefficient in InGaN/GaN multiple quantum wells" Y.-C. Huang, J.-C. Liang, C.-K. Sun, A. Abare, S. P. DenBaars. Applied Physics Letters, 78, pp. 928-930, (2001).
"High UV/solar rejection ratios in GaN/AlGaN/GaN p-i-n photodiodes" D. L. Pulfrey, J. J. Kuek, M. P. Leslie, B. D. Nener, G. Parish, U. K. Mishra, P. Kozodoy, E. J. Tarsa. IEEE Transactions on Electron Devices, 48, pp. 486-489, (2001).
"Current instabilities in GaN-based devices" I. Daumiller, D. Theron, C. Gaquiere, A. Vescan, T. Dietrich, A. Wieszt, H. Leier, R. Vetury, U. K. Mishra, I. P. Smorchkova, S. Keller, N. X. Nguyen, E. Kohn. IEEE Electron Device Letters, 22, pp. 62-64, (2001).
"Dominant role of the piezoelectric field in the pressure behavior of InGaN/GaN quantum wells" G. Vaschenko, D. Patel, C. S. Menoni, S. Keller, U. K. Mishra, S. P. DenBaars. Applied Physics Letters, 78, pp. 640–642, (2001).
"Coherent optical control of acoustic phonon oscillations in InGaN/GaN multiple quantum wells" C.-K. Sun, Y.-K. Huang, J.-C. Liang, A. Abare, S. P. DenBaars. Applied Physics Letters, 78, pp. 1201-1203, (2001).
"Development of selective lateral photoelectrochemical etching of InGaN/GaN for lift-off applications" A. R. Stonas, T. Margalith, S. P. DenBaars, L. A. Coldren, E. L. Hu. Applied Physics Letters, 78, pp. 1945-1947, (2001).
"Enhancement of breakdown voltage in AlGaN/GaN high electron mobility transistors using a field plate" S. Karmalker, U. K. Mishra. IEEE Transactions on Electron Devices, 48, pp. 1515-1521, (2001).
"GaN HBT: Toward an RF device" L. S. McCarthy, I. P. Smorchkova, H. Xing, P. Kozodoy, P. Fini, J. Limb, D. L. Pulfrey, J. S. Speck, M. J. W. Rodwell, S. P. DenBaars, U. K. Mishra. IEEE Transactions on Electron Devices, 48, pp. 543-551, (2001).
"Gallium nitride based high power heterojunction field effect transistors: process development and present status at UCSB" S. Keller, G. Parish, N. Ziang, J. J. Xu, B. P. Keller, S. P. DenBaars, U. K. Mishra. IEEE Transactions on Electron Devices, 48, pp. 552-559, (2001).
"Excitonic polariton structures in Wurtzite GaN" K. Torii, S. F. Chichibu, T. Deguchi, H. Nakanishi, T. Sota, S. Nakamura. Physica A, 302, pp. 268-276, (2001).
"Metalorganic chemical vapor deposition of GaN on Si(111): Stress control and application to field-effect transistors" H. Marchand, L. Zhao, N. Zhang, B. Moran, R. Coffie, U. K. Mishra, J. S. Speck, S. P. DenBaars, J. A. Frietas. Journal of Applied Physics, 89, pp. 7846-7451, (2001).
"Study of the defects in GaN grown my the two-flow metalorganic chemical vapor deposition technique using monoenergetic positron beams" A. Uedono, S. F. Chichibu, Z. Q. Chen, M. Sumiya, R. Suzuki, T. Ohdaira, T. Mikado, T. Mukai, S. Nakamura. Journal of Applied Physics, 90, pp. 181-186, (2001).
"Quantum corrections to the electrical conduction in an AlGaN/GaN heterostructure" Z. Dziuba, M. Gorska, J. Antoszewski, A. Babinski, P. Kozodoy, S. Keller, B. Keller, S. P. DenBaars, U. K. Mishra. Applied Physics A (Materials Science Processing), A72, pp. 691-698, (2001).
"Influence of composition and well-width fluctuations on optical gain in (In, Ga)N multiple quantum wells" M. Vehse, P. Michler, J. Gutowski, S. Gigge, D. Hommel, H. Selke, S. Keller, S. P. DenBaars. Semiconductor Science & Technology, 16, pp. 406-412, (2001).
"Special issue on group III-N semiconductor electronics" U. K. Mishra, J. C. Zolper. IEEE Transactions on Electron Devices, 48, pp. 405-406, (2001).
"Very-high power density AlGaN/GaN HEMTs" Y. F. Wu, D. Kapolnek, J. P. Ibbetson, P. Parikh, B. P. Keller, U. K. Mishra. IEEE Transactions on Electron Devices, 48, pp. 586-590, (2001).
"The impact of surface states on the DC and RF characteristics of AlGaN/GaN HFETs" R. Vetury, N. Q. Zhang, S. Keller, U. K. Mishra. IEEE Transactions on Electron Devices, 48, pp. 560-566, (2001).
"Analysis of the active region of overheating temperature in green LEDs based on group III nitrides" G.A. Sukach, P. S. Smertenko, P. F. Oleksenko, S. Nakamura. Technical Physics, 46, pp. 438-441, (2001).
"Enhanced diffusion as a mechanism for ion-induced damage propagation in GaN" E. D. Haberer, C. H. Chen, M. Hansen, S. Keller, S. P. DenBaars, U. K. Mishra, E.L. Hu. Journal of Vacuum Science and Technology B, 19, pp. 603-608, (2001).
"Femtosecond pump-probe spectroscopy and time-resolved photoluminescence of an In/sub x/Ga/sub 1-x/N/GaN double heterostructure" C. K. Choi, B. D. Little, Y. H. Kwon, J. B. Lam, J. J. Song, Y. C. Chang, S. Keller, U. K. Mishra, S. P. DenBaars. Physical Review B, 63, pp. 195302/1-7, (2001).
"Cracking of GaN films" E. V. Etzkorn, D. R. Clarke. Journal of Applied Physics, 89, pp. 1025-1034, (2001).
"Impact of internal electric field and localization effect on quantum well excitons in AlGaN/GaN/InGaN light emitting diodes" S. F. Chichibu, T. Sota, K. Wada, O. Brandt, K. H. Ploog, S. P. DenBaars, S. Nakamura. Physica Status Solidi A, 183, pp. 91-98, (2001).
"Mapping piezoelectric-field distribution in gallium nitride with scanning second-harmonic generation microscopy" C. K. Sun, S. W. Chu, S. P. Tai, S. Keller, A. Abare, U. K. Mishra, S. P. DenBaars. Scanning, 23, pp. 182-192, (2001).
"Studies of carrier dynamics in unintentionally doped gallium nitride bandtail states" C.-K. Sun, J.-C. Liang, X.-Y. Yu, S. Keller, U. K. Mishra, S. P. DenBaars. Applied Physics Letters, 78, pp. 2724-2726, (2001).
"The role of high-temperature island coalescence in the development of stresses in GaN films" T. Bottcher, S. Einfeldt, S. Figge, R. Chierchia, H. Heinke, D. Hommel, J. S. Speck. Applied Physics Letters, 78, pp. 1976-1978, (2001).
"Strain-engineered self-assembled semiconductor quantum dot lattices" H. Lee, J. A. Johnson, M. Y. He, J. S. Speck, and P. M. Petroff. Applied Physics Letters, 78, pp. 105–107, (2001).
"Investigations of chemical vapor deposition of GaN using synchotron radiation" C. Thompson, G. B. Stephenson, J. A. Eastman, A. Munkholm, O. Auciello, M. V. R. Murty, P. Fini, S. P. DenBaars, J. S. Speck. Journal of the Electrochemical Society, 148, pp. C390-C394, (2001).
"Effect of threading dislocations on AlGaN/GaN heterojunction bipolar transistors" L. McCarthy, I. Smorchkova, H. Xing, P. Fini, S. Keller, J. Speck, S. P. DenBaars, M. J. W. Rodwell, U. K. Mishra. Applied Physics Letters, 78, pp. 2235-2237, (2001).
"Spin coherence and dephasing in GaN" B. Beschoten, E. Johnston-Halperin, D. K. Young, M. Poggio, J. E. Grimaldi, S. Keller, S. P. DenBaars, U. K. Mishra, E. L. Hu, D. D. Awschalom. Physical Review B, 63, pp. 121202-1—121202-4, (2001).
"Mass transport regrowth of GaN for ohmic contacts to AlGaN/GaN" S. Heikman, S. Keller, S. P. Denbaars, U. K. Mishra. Applied Physics Letters, 78, pp. 2876-2878, (2001).
"Effect of growth termination conditions on the performance of AlGaN/GaN high electron mobility transistors" S. Keller, R. Vetury, G. Parish, S. P. DenBaars, U. K. Mishra. Applied Physics Letters, 78, pp. 3088-3090, (2001).
"Evidence of localization effects in IngaN single-quantum-well ultraviolet light-emitting diodes" S. F. Chichibu, K. Wada, J. Mullhauser, O. Brandt, K. H. Ploog, T. Mizutani, A. Setoguchi, R. Nakai, M. Sugiyama, H. Nakanishi, K. Torri, T. Deguchi, T. Sota, S. Nakamura. Applied Physics Letters, 78, p. 679, (2001).

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