Publications: The Interdisciplinary Center for Wide Bandgap Semiconductors and The Solid State Lighting and Display Center

The Interdisciplinary Center for
Wide Bandgap Semiconductors
and
The Solid State Lighting & Display Center

P u b l i c a t i o n s
( 1 9 9 5 - 1 9 9 1 )

[ 2005 ] [ 2004 ] [ 2003 ] [ 2002 ] [ 2001 ] [ 2000 ] [ 1999 ] [ 1998 ] [ 1997 ] [ 1996 ] [ 1995 - 1991 ]

"Effect of atmospheric pressure MOCVD growth conditions on UV band-edge photoluminescence in GaN thin films" B. P. Keller, S. Keller, D. Kapolnek, M. Kato, H. Masui, S. Imagi, U. K. Mishra, S. P. DenBaars. Electronics Letters, 31, pp. 1102-1103, (1995).
"Structural evolution in epitaxial metalorganic chemical vapor deposition grown GaN films on sapphire" D. Kapolnek, X. H. Wu, B. Heying, S. Keller, B. P. Keller, S. P. DenBaars. Applied Physics Letters, 67, pp. 1541-1543, (1995).
"Paramagnetic resonance in GaN-based light emitting diodes" W. E. Carlos, E. R. Glaser, T. A. Kennedy, S. Nakamura. Applied Physics Letters, 67, pp. 2376-2378, (1995).
"Superbright green InGaN single-quantum-well-structure light-emitting diodes" S. Nakamura, M. Senoh, N. Iwasa, S.-I. Nagahama, T. Yamada, T. Mukai. Japanese Journal of Applied Physics, Part 2, 34, pp. L1332-L1335, (1995).
"Polarized Raman spectra in GaN" T. Azuhata, T. Sota, K. Suzuki, S. Nakamura. Journal of Physics: Condensed Matter, 7, pp. L129-L133, (1995).
"Excitonic emissions from hexagonal GaN epitaxial layers" S. Chichibu, T. Azuhata, T. Sota, S. Nakamura. Journal of Applied Physics, 79, pp. 2784-2786, (1995).
"Highly luminous III-V nitride-based devices head for the highway, color displays" S. Nakamura. IEEE, (1995).
"InGaN/AlGaN blue-light-emitting diodes" S. Nakamura. Journal of Vacuum Science and Technology A, 13, pp. 705-710, (1995).
"High-brightness InGaN blue, green, and yellow light-emitting diodes with quantum well structures" S. Nakamura, M. Senoh, N. Iwasa, S. Nagahama. Japanese Journal of Applied Physics, 34, pp. L797-L799, (1995).
"High-power InGaN single-quantum-well-structure blue and violet light-emitting diodes" S. Nakamura, M. Senoh, N. Iwasa, S. Nagahama, Y. Yamada, T. Mukai. Applied Physics Letters, 67, pp. 1868-1870, (1995).
"III-V nitride light-emitting diodes" S. Nakamura. OSA Proceedings on Advanced Solid-State Lasers, 24, pp. 20-24, (1995).
"A bright future for blue/green LEDs" S. Nakamura. IEEE Circuits and Devices Magazine, pp. 19-23, (1995).
"Candela-class high-brightness InGaN/AlGaN double-heterostructure blue-light-emitting diodes" S. Nakamura, T. Mukai, M. Senoh. Applied Physics Letters, 64, pp. 1687-1689, (1994).
"Growth of In/subx-Ga/sub (1-x)-N compound semiconductors and high-power InGaN/AlGaN double heterostructure violet-light-emitting diodes" S. Nakamura. Microelectronics Journal, 25, pp. 651-659, (1994).
"Zn-doped InGaN growth and InGaN/AlGaN double heterostructure blue light emitting diodes" S. Nakamura. Journal of Crystal Growth, 145, pp. 911-917, (1994).
"InGaN/AlGaN double heterostructure blue LEDs" S. Nakamura. Materials Research Symposium Proceedings, 339, pp. 173-178, (1994).
"High-brightness InGaN/AlGaN double heterostructure blue-green-light-emitting diodes" S. Nakamura, T. Mukai, M. Senoh. Journal of Applied Physics, 76, pp. 8189-8191, (1994).
"In/sub x/Ga/sub (1-x)/N/In/sub y/Ga/sub (1-y)/N superlattices grown on GaN films" S. Nakamura, T. Mukai, M. Senoh, S. Nagahama, N. Iwasa. Journal of Applied Physics, 74, pp. 3911-3915, (1993).
"InGaN blue-light-emitting diodes" S. Nakamura. Journal of the Institute of Electronics, Information and Communication Engineers, 76, pp. 913-917, (1993).
"High-power InGaN/GaN double-heterostructure violet light emitting diodes" S. Nakamura, M. Senoh, T. Mukai. Applied Physics Letters, 62, pp. 2390-2392, (1993).
"Cd-doped InGaN films grown on GaN films" S. Nakamura, N. Iwasa, S. Nagahama. Japanese Journal of Applied Physics, Part 2, 32, pp. L338-L341, (1993).
"p-GaN/N-InGaN/N-GaN double heterostructure blue-light-emitting diodes" S. Nakamura, M. Senoh, T. Mukai. Japanese Journal of Applied Physics, Part 2, 32, pp. L8-L11, (1993).
"Si-doped InGaN films grown on GaN films" S. Nakamura, T. Mukai, M. Senoh. Japanese Journal of Applied Physics, Part 2, 32, pp. L16-L19, (1993).
"High-quality InGaN films grown on GaN films" S. Nakamura, T. Mukai. Japanese Journal of Applied Physics, Part 2, 31, pp. L1457-L1459, (1992).
"Si- and Ge-doped GaN films grown with GaN buffer layers" S. Nakamura, T. Mukai, M. Senoh. Japanese Journal of Applied Physics, Part 1, 31, pp. 2883-2888, (1992).
"In situ, monitoring and Hall measurements of GaN grown with GaN buffer layers" S. Nakamura, T. Mukai, M. Senoh. Journal of Applied Physics, 71, pp. 5543-5549, (1992).
"Hole compensation mechanism of P-type GaN films" S. Nakamura, N. Iwasa, M. Senoh, T. Mukai. Japanese Journal of Applied Physics, Part 1, 31, pp. 1258-1266, (1992).
"Thermal annealing effects on p-type Mg-doped GaN films" S. Nakamura, T. Mukai, M. Senoh, N. Iwasa. Japanese Journal of Applied Physics, Part 2, 31, pp. L139-L142, (1992).
"High-power GaN P-N junction blue-light-emitting diodes" S. Nakamura, T. Mukai, M. Senoh. Japanese Journal of Applied Physics, Part 2, 30, pp. L1998-L2001, (1991).
"GaN growth using GaN buffer layer" S. Nakamura. Japanese Journal of Applied Physics, Part 2, 30, pp. L1705-L1707, (1991).
"Highly P-typed Mg-doped GaN films grown with GaN buffer layers" S. Nakamura, M. Senoh, T. Mukai. Japanese Journal of Applied Physics, Part 2, 30, pp. L1708-L1711, (1991).
"In situ monitoring GaN growth using interference effects" S. Nakamura. Japanese Journal of Applied Physics, Part 1, 30, pp. L1620-L1627, (1991).
"Analysis of real-time monitoring using interference effects" S. Nakamura. Japanese Journal of Applied Physics, Part 1, 30, pp. 1348-1353, (1991).
"Novel metalorganic chemical vapor deposition system for GaN growth" S. Nakamura, Y. Harada, M. Senoh. Applied Physics Letters, 58, pp. 2021-2023, (1991).

p e o p l e § p u b l i c a t i o n s § l a b s § r e s e a r c h
s e m i n a r s § r e l a t e d l i n k s § c o n t a c t i n f o r m a t i o n