Publications: The Interdisciplinary Center for Wide Bandgap Semiconductors and The Solid State Lighting and Display Center

The Interdisciplinary Center for
Wide Bandgap Semiconductors
and
The Solid State Lighting & Display Center

P u b l i c a t i o n s
( 2 0 0 2 )

[ 2005 ] [ 2004 ] [ 2003 ] [ 2002 ] [ 2001 ] [ 2000 ] [ 1999 ] [ 1998 ] [ 1997 ] [ 1996 ] [ 1995 - 1991 ]

"Femtosecond dynamics of exciton bleaching in bulk GaN at room temperature" Y. C. Huang, G. W. Chern, K. H. Lin, J. C. Liang, C. K. Sun, C. C. Hsu, S. Keller, S. P. DenBaars. Applied Physics Letters, 81, pp. 85-87, (2002).
"Structural characterization of nonpolar (11 (2) over-bar0) a-plane GaN thin films grown on (1 (1) over-bar02) r-plane sapphire" M. D. Craven, S. H. Lim, F. Wu, J. S. Speck, S. P. DenBaars. Applied Physics Letters, 81, pp. 469-471, (2002).
"Growth of Fe doped semi-insulating GaN by metalorganic chemical vapor deposition" S. Heikman, S. Keller, S. P. DenBaars, U. K. Mishra. Applied Physics Letters, 81, pp. 439-441, (2002).
"Threading dislocation reduction via laterally overgrown nonpolar (11 (2) over-bar0) a-plane GaN" M. D. Craven, S. H. Lim, F. Wu, J. S. Speck, S. P. DenBaars. Applied Physics Letters, 81, pp. 1201-1203, (2002).
"Impurity incorporation in INGaN grown by rf plasma-assisted molecular beam epitaxy" C. Poblenz, T. Mates, M. Craven, S. P. DenBaars, J. S. Speck. Applied Physics Letters, 81, pp. 2767-2769, (2002).
"Investigation of the piezoelectric polarization in in (In,Ga)N/GaN multiple quantum wells grown by plasma-assisted molecular beam epitaxy" P. Waltereit, M. D. Craven, S. P. DenBaars, J. S. Speck. Journal of Applied Physics, 92, pp. 456-460, (2002).
"Direct imaging of reverse-bias leakage through pure screw dislocations in GaN films grown by molecular beam epitaxy on GaN templates" J. W. P. Hsu, M. J. Manfra, R. J. Molnar, B. Heying, J. S. Speck. Applied Physics Letters, 81, pp. 79-81, (2002).
"Characterization of nitrides by electron paramagnetic resonance (EPR) and optically detected magnetic resonance (ODMR)" E. R. Glacer, W. E. Carlos, G. C. B. Braga, J. A. Freitas, Jr., W. J. Moore, B. V. Shanabrook, A. E. Wickenden, D. D. Koleske, R. L. Henry, M. W. Bayerl, M. S. Brandt, H. Obloh, P. Kozodoy, S. P. DenBaars, U. K. Mishra, S. Nakamura, E. Haus, J. S. Speck, J. E. Van Nostrand, M. A. Sanchez, E. Calleja, A. J. Ptak, T. H. Myers, R. J. Molnar. Materials Science & Engineering B, 93, pp. 39-48, (2002).
"Gallium nitride materials-progress, status, and potential roadblocks" R. F. Davis, A. M. Roskowski, E. A. Preble, J. S. Speck, B. Heying, J. A. Freitas, Jr., E. R. Glacer, W. E. Carlos. Proceedings of the IEEE, 90, pp. 993-1005, (2002).
"A new high performance phase shifter using Ba_xSr_1-xTiO₃ thin films" B. Acikel, T. R. Taylor, P. J. Hansen, J. S. Speck, R. A. York. IEEE Microwave & Wireless Components Letters, 12, pp. 237-239, (2002).
"Reduction of reverse-bias leakage current in Schottky diodes on GaN grown by molecular-beam epitaxy using surface modification with atomic force microscope" E. J. Miller, D. M. Schaadt, E. T. Yu, C. Poblenz, C. Elsass, J. S. Speck. Journal of Applied Physics, 91, pp. 9821-9826, (2002).
"GaN-GaN junctions with ultrathin AlN interlayers: Expanding heterojunction design" S. Keller, S. Heikman, L. Shen, I. P. Smorchkova, S. P. DenBaars, U. K. Mishra. Applied Physics Letters, 80, pp. 4387-4389, (2002).
"Chemical mechanical polishing of gallium nitride" P. R. Tavernier, T. Margalith, L. A. Coldren, S. P. DenBaars, D. R. Clarke. Electrochemical and Solid-State Letters, 5, pp. G61-G64, (2002).
"Systematic characterization of Cl2 reactive ion etching for improved ohmics in AlGaN/GaN HEMTs" D. Buttari, A. Chini, G. Meneghesso, E. Zanoni, B. Moran, S. Heikman, N. Q. Zhang, L. Shen, R. Coffie, S. P. DenBaars, U. K. Mishra. IEEE Electron Device Letters, 23, pp. 76-78, (2002).
"Small signal RF performance of AlGaN/GaN heterojunction bipolar transistors" L. S. McCarthy, I. P. Smorchkova, P. Fini, M. J. W. Rodwell, J. Speck, S. P. DenBaars, U. K. Mishra. Electronics Letters, 38, pp. 144-145, (2002).
"Impact of Ga/N flux ratio on trap states in n-GaN grown by plasma-assisted molecular beam epitaxy" A. Hierro, A. R. Arehart, B. Heying, M. Hansen, U. K. Mishra, S. P. DenBaars, J. S. Speck, S. A. Ringel. Applied Physics Letters, 80, pp. 805-807, (2002).
"Morphological and optical properties of InGaN laser diodes on laterally overgrown GaN" M. Hansen, P. Fini, M. Craven, B. Heying, J. S. Speck, S. P. DenBaars. J. Crys. Growth, 234, pp. 623-630, (2002).
"Ultrashort hole capture time in Mg-doped Gan thin fims" K.-H. Lin, G.-W. Chern, S.-W. Chu, C.-K. Sun, H. Xing, Y. Smorchkova, S. Keller, U. Mishra, S. P. Denbaars. Applied Physics Letters, 81, pp. 3975-3977, (2002).
"Higher efficiency InGaN laser diodes with an approved quantum well capping configuration" M. Hansen, J. Piprek, P. M. Pattison, J. S. Speck, S. Nakamura, S. P. DenBaars. Applied Physics Letters, 81, pp. 4275-4277, (2002).
"Realization of wide electron slabs by polarization bulk doping in graded III-V nitride semiconductor alloys" D. Jena, S. Heikman, D. Green, D. Buttari, R. Coffie, H. Xing, S. Keller, S. DenBaars, J. S. Speck, U. K. Mishra, I. Smorchkova. Applied Physics Letters, 81, pp. 4395-4397, (2002).
"Magnetic resonance studies of Mg-doped GaN epitaxial layers grown by organometallic chemical vapor deposition" E. R. Glaser, W. E. Carlos, G. C. B. Braga, J. A. Frietas, W. J. Moore, B. V. Shanabrook, R. L. Henry, A. E. Wickenden, D. D. Koleske, H. Obloh, P. Kozodoy, S. P. DenBaars, U. K. Mishra. Physical Review B, 6508, pp. U244-U353, (2002).
"Control of crystallographic tilt in GaN grown on Si (111) by cantilever epitaxy" T. M. Katona, J. S. Speck, S. P. DenBaars. Applied Physics Letters, 81, pp. 3558-3560, (2002).
"Mg-rich precipitates in the p-type doping of InGaN-based laser diodes" M. Hansen, L. F. Chen, S. H. Lim, S. P. DenBaars. Applied Physics Letters, 80, pp. 2469-2471, (2002).
"Direct measurement of the polarization charge in AlGaN/GaN heterostructures using capacitance-voltage carrier profiling" E. J. Miller, E. T. Yu, C. Poblenz, C. Elsass, J. S. Speck. Applied Physics Letters, 80, 3551-3553, (2002).
"Effect of the nucleation layer on stress during cantilever epitaxy of GaN on Si (111)" T. M. Katona, J. S. Speck, S. P. DenBaars. Physical Status Solidi A, 194, pp. 541-544, (2002).
"Nonpolar (11-20) a-plane gallium nitride thin films grown on (1-102) r-plane sapphire: heteroepitaxy and lateral overgrowth" M. D. Craven, S. H. Lim, F. Wu, J. S. Speck, S. P. DenBaars. Physical Status Solidi A, 194, pp. 541-544, (2002).
"Heteroepitaxial growth of GaN on 6H-SiC (0001) by plasma-assisted molecular beam epitaxy" P. Waltereit, S. H. Lim, M. McLaurin, J. S. Speck. Physical Status Solidi A, 194, pp. 524-527, (2002).
"Transport properties of 2DEGs in AlGaN/GaN heterostructures: spin splitting and occupation higher subbands" A. Link, T. Graf, O. Ambacher, A. Jimenez, E. Calleja, Y. Smorchkova, J. Speck, U. Mishra, M. Stutzmann. Physical Status Solidi B, 234, pp. 805-809, (2002).
"Photoreflectance studies of AlGaN/GaN heterostructures containing a polarization induced 2DEG" R. Goldhahn, C. Buchheim, S. Shokhovets, G. Gobsch, O. Ambacher, A. Link, M. Hermann, M. Stutzmann, Y. Smorchkova, U. K. Mishra, J. S. Speck. Physical Status Solidi B, 234, pp, 713-716, (2002).
"Effect of p-doped overlayer thickness on RF-dispersion in GaN junction FETs" A. Jimènez, D. Buttari, D. Jena, R. Coffie, S. Heikman, N. Q. Zhang, L. Shen, E. Calleja, E. Muñoz, J. Speck, U. K. Mishra. IEEE Electronic Device Letters, 23, pp. 306-308, (2002).
"The role of growth conditions on the p-doping of GaN by plasma-assisted molecular beam epitaxy" E. Haus, J.P. Smorchkova, B. Heying, P. Fini, C. Poblenz, T. Mates, U.K. Mishra, J.S. Speck. Journal of Crystal Growth, 246, pp. 55-63, (2002).
"Electronic properties of GaN induced by a subsurface stressor" P. Waltereit, A.E. Romanov, J.S. Speck. Applied Physics Letters, 81, pp. 4754-4756, (2002).
"Direct measurement of the polarization charge in A1GaN/GaN heterostructures using capacitance-voltage carrier profiling" E.J. Miller, E.T. Yu, C. Poblenz, C. Elsass, J.S. Speck. Applied Physics Letters, 80, pp. 3551-3553, (2002).
"P-capped GaN-AlGaN-GaN high-electron mobility transistors (HEMTs)" R. Coffie, D. Buttari, S. Heikman, S. Keller, A. Chini, L. Shen, U.K. Mishra. IEEE Electronic Device Letters, 23, pp. 306-308, (2002).
"Oxidation control of GaAs pHEMTs for high efficiency applications" Zheng Can, R. Coffie, D. Buttari, J. Champlain, U.K. Mishra. IEEE Electronic Device Letters, 23, pp. 380-382, (2002).
"/sup60/Co gamma-irradiation-induced defects in n-GaN" G.A. Umana-Membreno, J.M. Dell, T.P. Hessler, B.D. Nener, G. Parish, L. Faraone, U.K. Mishra. Applied Physics Letters, 80, pp. 4354-4356, (2002).
"Effect of scattering by strain fields surrounding edge dislocations on electron transport in two-dimensional electron gases" D.Jena, U.K. Mishra. Applied Physics Letters, 80, pp. 64-66, (2002).
"Recombination Dynamics of Localized Excitons in Cubic Phase InxGa1 - xN/GaN Multiple Quantum Wells on 3C-SiC/Si (001)" S.F. Chichibu, T. Onuma, T. Kitamura, T. Sota, S.P. DenBaars, S. Nakamura, H. Okumura. Physica Status Solidi B-Basic Research, 234, pp. 746-749, (2002).
"Physics of high-power InGaN/GaN lasers" J. Piprek, S. Nakamura. IEE Proceedings Optoelectronics, 149, pp. 145-151, (2002).

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