• "AlGaN-GaN current aperture vertical electron transistors fabricated by photoelectrochemical wet etching" Y. Gao, A. R. Stonas, I. Ben-Yaacov, U. Mishra, S. P. DenBaars, E. L. Hu. Electronic Letters, 39, pp. 148-149, (2003).
• "Wafer-fused AlGaAs/GaAs/GaN heterojunction bipolar transistor" S. Estrada, H. Xing, A. Stonas, A. Huntington, U. Mishra, S. DenBaars, L. Coldren, E. Hu. Applied Physics Letters, 82, pp. 820-822, (2003).
• "Influence of InN mole fraction on the recombination processes of localized excitons in strained cubic InxGa1-xN/GaN multiple quantum wells” S. F. Chichibu, T. Onuma, T. Sota, S. P. DenBaars, S. Nakamura, T. Kitamura, Y. Ishida, H. Okumura. Journal of Applied Physics, 93, pp. 2051-2054, (2003).
• "Memory effect and redistribution of Mg into sequentially regrown GaN layer by metalorganic chemical vapor deposition" H. Xing, D. S. Green, H. Yu, T. Mates, P. Kozodoy, S. Keller, S. P. DenBaars, U. K. Mishra. Japanese Journal of Applied Physics, 42, pp. 50-53, (2003).
• "High linearity and high efficiency of class-B power amplifiers in GaN HEMT technology" V. Paidi, X. Shouxuan, R. Coffie, B. Moran, S. Heikman, S. Keller, A. Chini, S. P. DenBaars, U. K. Mishra, S. Long, M. J. W. Rodwell. IEEE Transactions on Microwave Journal Theory & Techniques, 51, pp. 643-652, (2003).
• "1.3 mu m wavelength vertical cavity surface emitting laser fabricated by orientation-mismatched wafer bonding: a prospect for polarization control" Y. L. Okuno, J. Geske, K.-G. Gan, Y. J. Chiu, S. P. DenBaars, J. E. Bowers, Applied Physics Letters, 82, pp. 2377-2379, (2003).
• "Stimulated emission and ultrafast carrier relaxation in InGaN multiple quantum wells" U. Ozgur, H. O. Everitt, S. Keller, S. P. DenBaars. Applied Physics Letters, 82, pp. 1416-1418, (2003).
• "Metalorganic chemical vapor deposition of highly conductive Al0.65Ga0.35N films" P. Cantu, S. Keller, U. K. Mishra, S. P. DenBaars. Applied Physics Letters, 82, pp. 3683-3685, (2003).
• "Polarization effects in AlGaN/GaN and GaN/AlGaN/GaN heterostructures" S. Heikman, S. Keller, Y. Wu, J. S. Speck, S. P. DenBaars, U. K. Mishra. Journal of Applied Physics, 93, pp. 10114-10118, (2003).
• "n-AlGaAs/p-GaAs/n-GaN heterojunction bipolar transistor wafer infused at 550-750 degrees C" S. Estrada, A. Huntington, A. Stonas, H. Xing, U.Mishra, S. DenBaars, L. Coldren, E. Hu. Applied Physics Letters, 83, pp. 560-562, (2003).
• "Recombination dynamics of localized excitons in cubic InxGa1-xN/GaN multiple quantum wells grown by radio frequency molecular beam epitaxy on 3C-SiC substrate" S. F. Chichibu, T. Onuma, T. Aoyama, K. Nakajima, P. Ahmet, T. Chikyow, T. Sota, S. P. DenBaars, S. Nakamura, T. Kitamura, Y. Ishida, H. Okumura. Journal of Vacuum Science & Technology B, 21, pp. 1856-1862, (2003).
• "Structural and morphological characteristics of planar (1120) a-plane gallium nitride grown by hydride vapor phase epitaxy" B. A. Haskell, F. Wu, S. Matsuda, M. D. Craven, P. T. Fini, S. P. DenBaars, J. S. Speck, S. Nakamura. Applied Physics Letters, 83, pp. 1554-1556, (2003).
• "Refractive index study of AlxGa1-xN films grown on sapphire substrates" N. A. Sanford, L. H. Robins, A. V. Davydov, A. Shapiro, D. V. Tsvetkov, A. V. Dmitriev, S. Keller, U. K. Mishra, S. P. DenBaars. Journal of Applied Physics, 94, pp. 2980-2991, (2003).
• "Cathodoluminescence characterization of dislocations in gallium nitride using a transmission electron microscope" N. Yamamoto, H. Itoh, V. Grillo, S. F. Chichibu, S. Keller, J. S. Speck, S. P. DenBaars, U. K. Mishra, S. Nakamura, G. Salviati. Journal of Applied Physics, 94, pp. 4315-4319, (2003).
• "Observation of huge nonlinear absorption enhancement near exciton resonance in GaN" K.-H. Lin, G.-W. Chern, Y.-C. Huang, S. Keller, S. P. DenBaars, C.-K. Sun. Applied Physics Letters, 83, pp. 3087-3089, (2003).
• "High conductivity modulation doped AlGaN/GaN multiple channel heterostructures" S. Heikman, S. Keller, D. S. Green, S. P. DenBaars, U. K. Mishra. Journal of Applied Physics Letters, 94, pp. 5321-5323, (2003).
• "Modeling the extended defect evolution in lateral epitaxial overgrowth of GaN: subgrain stability" A. E. Romanov, P. Fini, J. S. Speck. Journal of Applied Physics, 93, pp. 106-114, (2003).
• "Study of the deleterious aging effects in GaN/AlGaN heterostructures" S. Elhamri, A. Saxler, W. C. Mitchel, R. Berney, C. Elsass, Y. Smorchkova, U. K. Mishra, J. S. Speck, U. Chowdhury, R. D. Dupius. Journal of Applied Physics, 93, pp. 1079-1082, (2003).
• "Non-polar InxGa1-xN/GaN (1(1) over-bar-00) multiple quantum wells grown on gamma LiAlO2 (100) by plasma-assisted molecular beam epitaxy" Y. J. Sun, O. Brandt, S. Cronenberg, S. Dhar, H. T. Grahn, K. H. Ploog, P. Waltereit, J. S. Speck. Physical Review B, 6704, pp. 1306, (2003).
• "Reverse-bias leakage current reduction in GaN Schottky diodes by electrochemical surface treatment" E. J. Miller, D. M. Schaadt, E. T. Yu, P. Waltereit, C. Poblenz, J. S. Speck. Applied Physics Letters, 82, pp. 1293-1295, (2003).
• "High-quality GaN on intentionally roughened c-sapphire" Y. Golan, P. Fini, D. Dahan, F. Wu, S. Zamir, J. Salzman, J. S. Speck. European Physical Journal of Applied Physics, 22, pp. 11-14, (2003).
• "Characterization of a-plane GaN/(Al,Ga)N multiple quantum wells grown via metalorganic chemical vapor deposition" M. D. Craven, P. Waltereit, F. Fu, J. S. Speck, S. P. DenBaars. Japanese Journal of Applied Physics, 42, L235-L238, (2003).
• "Crystallographic wing tilt in laterally overgrown GaN" C. Rodel, H. Heinke, D. Hommel, T. M. Katona, J. S. Speck, S. P. DenBaars. Journal of Physics D: Applied Physics, 36, pp. A188-A191 (2003).
• "Magnetotransport properties of a polarization-doped three dimensional electron slab in graded slab in graded AlGaN" D. Jena, J. S Speck, A. Gossard, U. K. Mishra, A. Link, O. Ambacher. Physical Review B, 67, pp. 153306-1-4, (2003).
• "Improved synthesis of (In,Ga)N/GaN multiple quantum wells by plasma-assisted molecular-beam epitaxy" O. Brandt, Y. J. Sun, H. -P. Schonherr, K. H. Ploog, P. Waltereit, S. H. Lim, J. S. Speck. Applied Physics Letters, 83, pp. 90-92, (2003).
• "Polarity determination of a-plane GaN on r-plane sapphire and its effects on lateral overgrowth and heteroepitaxy" F. Wu, M. D. Craven, S. H. Lim, J. S. Speck. Journal of Applied Physics, 94, pp. 942-947, (2003).
• "Correlated scanning Kelvin probe and conductive atomic force microscopy studies of dislocations in gallium nitride" B. S. Simpkins, E. T. Yu, P. Waltereit, J. S. Speck. Journal of Applied Physics, 94, pp. 1448-1453, (2003).
• "Electrical and structural properties of AlGaN/AlGaN superlattice structures grown by metal-organic vapor deposition" S. Keller, P. Waltereit, P. Cantu, U. K. Mishra, J. S. Speck, S. P. DenBaars. Optical Materials, 23, pp. 1804-1811, (2003).
• "Polarity control during molecular beam epitaxy growth epitaxy growth of Mg-doped GaN" D. S. Green, E. Haus, F. Wu, L. Chen, J. S. Speck. Journal of Vacuum Science & Technology B, 21, 1804-1811, (2003).
• "Origin and microscopic mechanism for suppression of leakage currents in Schottky contacts to GaN grown by molecular beam epitaxy" E. J. Miller, D. M. Schaadt, E. T. Yu, X. L. Sun, L. J. Brillson, P. Waltereit, J. S.Speck. Journal of Applied Physics, 94, pp. 7611-7615. (2003).ss
• "Stress relaxation in mismatched layers due to threading dislocation inclination" A.E. Romanov, J.S. Speck. Applied Physics Letters, 83, pp.2569-2571. (2003).
• "High conductivity modulation doped AlGaN/GaN multiple channel heterostructures" S. Heikman, S. Keller, D.S. Green, S.P. DenBaars, U.K. Mishra. Journal of Applied Physics, 94, pp.5321-5325. (2003).
• "High-linearity class B power amplifiers in GaN HEMT technology" Shouxuan Xie, V. Paidi, R. Coffie, S. Keller, S. Heikman, B. Moran, A. Chini, S.P. DenBaars, U Mishra, S. Long, M.J.W. Rodwell. IEEE Microwave & Wireless Components Letters,13, pp.284-286. (2003).
• "Very high voltage operation (>330 V) with high current gain of AlGaN/GaN HBTs" Huili Xing, P.M. Chavarkar, S. Keller, S.P. DenBaars, U.K. Mishra. IEEE Electron Device Letters, 24, pp.141-143. (2003).
• "Proton-irradiation effects on AlGaN/AlN/GaN high electron mobility transistors" Xinwen Hu, A.P. Karmarka, Bongim Jun, D.M. Fleetwood, R.D. Schrimpf, R.D. Geil, R.A. Weller, B.D. White, M. Bataiev, L.J. Brillson, U.K. Mishra. IEEE Transactions on Nuclear Science, 50, pp.1791-1796. (2003).
• "Non-planar selective area growth and characterization of GaN and AlGaN" S. Heikman, S. Keller, S.P. DenBaars, U.K. Mishra, F. Bertram, J. Christen. Japanese Journal of Applied Physics Part 1-Regular Papers Short Notes & Review Papers, 42, pp.6276-6283. (2003).
• "Origin of etch delay time in Cl/sub 2/ dry etching of AlGaN/GaN structures" D. Buttari, A. Chini, T. Palacios, R. Coffie, L. Shen, H. Xing, S. Heikman, L. McCarthy, A. Chakraborty, S. Keller, U.K. Mishra. Applied Physics Letters, 83, pp.4779-4781. (2003).
• "Unpassivated p-GaN/AlGaN/GaN HEMTs with 7.1 W/mm at 10 GHz" R. Coffie, L. Shen, G. Parish, A. Chini, D. Buttari, S. Heikman, S. Keller, U.K. Mishra. Electronics Letters, 39, pp.1419-1420. (2003).
• "Growth and characteristics of Fe-doped GaN" S. Heikman, S. Keller, T. Mates, S.P. DenBaars, U.K. Mishra. Journal of Crystal Growth, 248, pp.513-517. (2003).
• "2.1 A/mm current density AlGaN/GaN HEMT" A. Chini, R. Coffie, G. Meneghesso, E. Zanoni, D. Buttari, S. Heikman, S. Keller, U.K. Mishra. Electronics Letters, 39, pp.625-626. (2003).
• "Transient characteristics of GaN-based heterostructure field-effect transistors" E. Kohn, I. Daumiller, M. Kunze, M. Neuburger, M. Seyboth, T.J. Jenkins, J.S. Sewell, J. Van Norstand, Y. Smorchkova, U.K. Mishra. IEEE Transactions on Microwave Theory & Techniques, 51, pp.634-642. (2003).
• "Explanation of anomalously high current gain observed in GaN based bipolar transistors" H. Xing, D. Jena D, M.J.W. Rodwell, U.K. Mishra. IEEE Electron Device Letters, 24, pp.4-6. (2003).

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