The Interdisciplinary Center for
Wide Bandgap Semiconductors
and
The Solid State Lighting & Display Center
P u b l i c a t i o n s
( 1 9 9 9 )
[ 2005] [ 2004 ] [ 2003 ] [ 2002 ] [ 2001
] [ 2000 ] [ 1999 ]
[ 1998 ] [ 1997
] [ 1996 ] [ 1995
- 1991 ]
-
"Optical properties of InGaN active layer in
ultraviolet light-emitting diode" T. Deguchi, K. Torii, K. Shimada, T.
Sota, R. Matsuo, M. Sugiyama, A. Setoguchi, S. Chichibu, S. Nakamura. Japanese
Journal of Applied Physics, Part 2, 38, pp. L975-L977, (1999).
-
"InGaN-based UV/blue/green/amber/red LEDs" T.
Mukai, M. Yamada, S. Nakamura.
Light Emitting Diodes: Research, Manufacturing,
and Applications (SPIE), 3621, pp. 2-13, (1999).
-
"InGaN-based blue light-emitting diodes and laser
diodes" S. Nakamura.
Journal of Crystal Growth, 201/202, pp. 290-295,
(1999).
-
"Present status of InGaN-based laser diodes"
S. Nakamura. Physical Status Solidi A, 176, pp. 15-22, (1999).
-
"Towards an AlGaN, solar-blind p-i-n photodetector"
D. L. Pulfrey, J. J. Kuek, B. D. Nener, G. Parish, U. K. Mishra, E. J.
Tarsa. Physica Status Solidi (a), 176, pp. 169-173, (1999).
-
"3-9-GHz GaN-based microwave power amplifiers
with L-C-R broad-band matching" Y.-F. Wu, R. A. York, S. Keller, B. P.
Keller, U. K. Mishra. IEEE Microwave and Guided Wave Letters, 9,
pp. 314-316, (1999).
-
"1-8-GHz GaN-based power amplifier using flip-chip
bonding" J. J. Xu, Y.-F. Wu, S. Keller, S. Heikman, B. J. Thibeault, U.
K. Mishra, R. A. York. IEEE Microwave and Guided Wave Letters, 9,
pp. 277-279, (1999).
-
"Strain relaxation of In/ sub x/Ga/ sub 1-x/
As during lateral oxidation of underlying AlAs layers" P. Chavarkar, L.
Zhao, S. Keller, A. Fisher, C. Zheng, J. S. Speck, U. K. Mishra. Applied
Physics Letters, 75, pp. 2253-2255, (1999).
-
"InGaN/GaN/AlGaN-based laser diodes grown on
free-standing GaN substrates" S. Nakamura. Materials Science and Engineering
B, 59, pp. 370-375, (1999).
-
"Photo-enhanced dissociation of hydrogen-magnesium
complexes in gallium nitride" Y. Kamiura, Y. Yamashita, S. Nakamura. Physica
B, 273/274, pp. 54-57, (1999).
-
"Very strong photoluminescence emission from
GaN grown on amorphous silica, substrate by gas source MBE" H. Asahi, K.
Iwata, H. Tampo, T. Kuroiwa, M. Hiroki, K. Asami, S. Nakamura, S. Gonda.
Journal
of Crystal Growth, 201/202, pp. 371-375, (1999).
-
"Blue light emitting laser diodes" S. Nakamura.
Thin
Solid Films, 343-344, pp. 345-349, (1999).
-
"Optical properties of InGaN quantum wells" S.
F. Chichibu, A. C. Abare, M. P. Mack, M. S. Minsky, T. Deguchi, D. Cohen,
P. Kozodoy, S. B. Fleisher, S. Keller, J. S. Speck, J. E. Bowers, E. Hu,
U. K. Mishra, L. A. Coldren, S. P. DenBaars, K. Wada, T. Sota, S. Nakamura.
Materials
Science and Engineering B, 59, pp. 298-306, (1999).
-
"Dimensionality of excitons in laser-diode structures
composed of In/sub x/Ga/sub 1-x/N multiple quantum wells" Y. Narukawa,
Y. Kawakami, Sg. Fujita, S. Nakamura. Physical Review B, 59, pp.
10283-10288, (1999).
-
"Development of violet InGaN-based laser diodes"
S. Nakamura. Oyo Buturi, 68, pp. 793-796, (1999).
-
"Optical properties of an InGaN active layer
in ultraviolet light emitting diode" T. Azuhata, K. Shimada, T. Deguchi,
T. Sota, R. Matsuo, M. Sugiyama, A. Setoguchi, S. Chichibu, S. Nakamura.
Japanese
Journal of Applied Physics, 86, pp. 4588-4593, (1999).
-
"White and UV LEDs" T. Mukai, S. Nakamura. Oyo
Buturi, 68, pp. 152-155, (1999).
-
"Spectroscopic studies in InGaN quantum wells"
S. F. Chichibu, K. Sota, K. Wada, S. P. DenBaars, S. Nakamura. MRS Internet
J. Nitride Semiconductor Research 4S1, G2.7 (1999).
-
"Properties of quantum well excitons in GaN/AlGaN
and InGaN/GaN/AlGaN UV, blue, green, amber light emitting diode structures"
S. F. Chichibu, T. Deguchi, T. Sota, K. Wada, S. P. DenBaars, T. Mukai,
S. Nakamura. Physical Status Solidi A, 176, pp. 85-90, (1999).
-
"InGaN/GaN/AlGaN-based laser diodes grown on
epitaxially laterally overgrown GaN" S. Nakamura. Journal of Materials
Research, 14, pp. 2716-2731, (1999).
-
"Ultraviolet InGaN and GaN Single-Quantum-Well-Structure
Light-Emitting Diodes Grown on Epitaxially Laterally Overgrown GaN Substrates"
T. Mukai and S. Nakamura. Jpn. J. Appl. Phys. Part 1, 38, 5735-5739,
(1999).
-
"Two-phonon absorption spectra in wurtzite GaN"
T. Azuhata, K. Shimada, T. Deguchi, T. Sota, K. Suzuki, S. Chichibu, S.
Nakamura. Applied Physics Letters, 75, pp. 2076–2078, (1999).
-
"The effect of threading dislocations, Mg doping,
and etching on the spectral responsivity in GaN-based ultraviolet detectors"
J. T. Torvik, J. I. Pankove, S. Nakamura, I. Grzegory, S. Porowski. Journal
of Applied Physics, 86, pp. 4588-4593, (1999).
-
"Demonstration of electrically pumped nitride
distributed feedback lasers employing dielectric gratings" A. C. Abare,
M. Hansen, J. S. Speck, L. A. Coldren, S. P. DenBaars. Annual Device
Research Conference Digest, pp. 198-199, (1999).
-
"Quantum-confined Stark effect in an AlGaN/GaN/AlGaN
single quantum well structure" T. Deguchi, K. Sekiguchi, A. Nakamura, T.
Sota, R. Matsuo, S. Chichibu, S. Nakamura. Japanese Journal of Applied
Physics, 38, pp. L914-L916, (1999).
-
"Characteristic of InGaN-based UV/blue/green/amber/red
light-emitting diodes" T. Mukai, M. Yamada, S. Nakamura. Japanese Journal
of Applied Physics, 38, pp. 3976-3981, (1999).
-
"A Comparison of the Optical Characteristics
of AlGaN, GaN, and InGaN Thin Films" Y.-H. Cho, T. J. Schmidt, G. H. Gainer,
J. B. Lam, J.J. Song, S. Keller, U. K. Mishra, S. P. DenBaars, W. Yang,
D. S. Kim, W. Jhe. Physica Status Solidi (b), 216, pp. 227-231,
(1999).
-
"Cl2 reactive ion etching for gate recessing
of AlGaN/GaN field-effect transistors" C.-H. Chen, S. Keller, E. D. Haberer,
L. Zhang, S. P. DenBaars, E. L. Hu, U. K. Mishra, Y. Wu. Journal of
Vacuum Science & Technology B: Microelectronics and Nanometer Structures,
17, pp. 2755-2758, (1999).
-
"Photoluminescense from laser assisted debonded
epitaxial GaN and ZnO films" P. R. Tavernier, P. M. Verghese, D. R. Clarke.
Applied
Physics Letters, 74, pp. 2678-2680, (1999).
-
"Large interband second-order susceptibilities
in In/sub x/Ga/sub 1-x/N/GaN quantum wells" H. Schmidt, A. C. Abare, J.
E. Bowers, S. P. Denbaars, A. Imamolu. Applied Physics Letters,
75, pp. 3611–3613, (1999).
-
"Characterization of an AlGaN/GaN two-dimensional
electron gas structure" A.Saxler, P. Debray, R. Perrin, S. Elhamri, W.
C. Mitchel, C. R. Elsass, I. P. Smorchkova, B. Heying, E. Haus,
P. Fini, J. P. Ibbetson, S. Keller, P. M. Petroff, S. P. DenBaars, U. K.
Mishra J. S. Speck. Journal of Applied Physics, 87, , pp. 369–374,
(2000).
-
"Effect of AlGaN/GaN Strained Layer Superlattice
Period on InGaN MQW Laser Diodes" M. Hansen, A. C. Abare, P. Kozodoy, T.
M. Katona, M. D. Craven, J.S. Speck, U. K. Mishra, L. A. Coldren, S. P.
DenBaars. Physica Status Solidi (a), 176, pp. 59-62, (1999).
-
"Thermal conductivity of lateral epitaxial overgrown
GaN films" C.-Y. Luo, H. Marchand, D. R. Clarke, S. P. DenBaars. Applied
Physics Letters, 75, pp. 4151–4153, (1999).
-
"Reflectance and emission spectra of excitonic
polaritons in GaN" K. Torii, T. Deguchi, T. Sota, K. Suzuki, S. Chichibu,
S. Nakamura. Physical Review B (Condensed Matter), 60, pp. 4723-4730,
(1999).
-
"Structural and vibrational properties of GaN"
T. Deguchi, D. Ichiryu, K. Toshikawa, K. Sekiguchi, T. Sota, R. Matsuo,
T. Azuhata, M. Yamaguchi, T. Yagi, S. Chichibu, S. Nakamura. Journal
of Applied Physics, 86, pp. 1860-1866, (1999).
-
"InGaN-based violet laser diodes" S. Nakamura.
Semiconductor
Science and Technology, 14, pp. R27-R40, (1999).
-
"Brillouin scattering study of bulk GaN" M. Yamaguchi,
T. Yagi, T. Sota, T. Deguchi, K. Shimada, S. Nakamura. Journal of Applied
Physics, 85, pp. 8502-8504, (1999).
-
"AlGaN/GaN dual-gate modulation-doped field effect
transistors" C.-H. Chen, K. Krishnamurthy, S. Keller, G. Parish, M. Rodwell,
U. K. Mishra, Y.-F. Wu. Electronics Letters, 35, pp. 933-935, (1999).
-
"Carrier Dynamics of Abnormal Temperature-Dependent
Emission Shift in MOCVD-Grown InGaN Epilayers and InGaN/GaN Quantum Wells"
Y.-H. Cho, B. D. Little, G. H. Gainer, J. J. Song, S. Keller, U. K. Mishra,
S. P. DenBaars. MRS Internet Journal Nitride Semiconductor Research,
4S1, G2.4, (1999).
-
"Fast Lateral Epitaxial Overgrowth of Gallium
Nitride by Metalorganic Chemical Vapor Deposition Using a Two-Step Process"
H. Marchand, J. P. Ibbetson, P. T. Fini, X. H. Wu, S. Keller, S. P. DenBaars,
J. S. Speck, U. K. Mishra.
MRS Internet Journal Nitride Semiconductor
Research, 4S1, G4.5, (1999).
-
"Thermal Annealing of InGaN/GaN Strained-Layer
Quantum Well" M. C. Y. Chan, K.-O. Tsang, E. H. Li, S. P. DenBaars. MRS
Internet Journal Nitride Semiconductor Research, 4S1, G6.25, (1999).
-
"Influence of Si-Doping on Carrier Localization
of MOCVD-Grown InGaN/GaN Multiple Quantum Wells" Y.-H. Cho, T. J. Schmidt,
S. Bidnyk, J. J. Song, S. Keller, U. K. Mishra, S. P. DenBaars. MRS
Internet Journal Nitride Semiconductor Research, 4S1, G6.44, (1999).
-
"Amplification Path Length Dependence Studies
of Stimulated Emission From Optically Pumped InGaN/GaN Multiple Quantum
Wells" T. J. Schmidt, S. Bidnyk, Y.-H. Cho, A. J. Fischer, J. J. Song,
S. Keller, U. K. Mishra, S. P. DenBaars.
MRS Internet Journal Nitride
Semiconductor Research, 4S1, G6.54, (1999).
-
"Scanning tunneling microscope-induced luminescence
of GaN at threading dislocations" S. Evoy, H. G. Craighead, S. Keller,
U. K. Mishra, S. P. DenBaars. Journal of Vacuum Science & Technology
B: Microelectronics and Nanometer Structures, 17, pp. 29-32, (1999).
-
"High resolution x-ray analysis of pseudomorphic
InGaN/GaN multiple quantum wells: Influence of Si doping concentration"
Yong-Hoon Cho, F. Fedler, R. J. Hauenstein, G. H. Park, J. J. Song,
S. Keller, U. K. Mishra, S. P. DenBaars. Journal of Applied Physics,
85, pp. 3006-3008, (1999).
-
"Low-temperature scanning tunneling microscope-induced
luminescence of an InGaN/GaN multiquantum well" S. Evoy, C. K. Harnett,
H. G. Craighead, S. Keller, U. K. Mishra, S. P. DenBaars. Applied Physics
Letters, 74, pp. 1457–1459, (1999).
-
"Cathodoluminescence mapping of epitaxial lateral
overgrowth in gallium nitride" S. J. Rosner, G. Girolami, H. Marchand,
P. T. Fini, J. P. Ibbetson, L. Zhao, S. Keller, U. K. Mishra, S. P. DenBaars,
J. S. Speck. Applied Physics Letters, 74, pp. 2035–2037, (1999).
-
"Near-field scanning optical microscopy of indium
gallium nitride multiple-quantum-well laser diodes" D.K. Young, M. P. Mack,
A. C. Abare, M. Hansen, L. A. Coldren, S. P. DenBaars, E. L. Hu, D. D.
Ashwalom. Applied Physics Letters, 74, pp. 2349–2351, (1999).
-
"Dislocation mediated surface morphology of GaN"
I. Heying, E. J. Tarsa, C. R. Elsass, P. Fini, S. P. DenBaars, J. S. Speck.
Journal
of Applied Physics, 85, pp. 6470-6476, (1999).
-
"Observation of growth modes during metal-organic
chemical vapor deposition of GaN" G. B. Stephenson, J. A. Eastman, C. Thompson,
O. Auciello, L. J. Thompson, A. Munkholm, P. Fini, S. P. DenBaars, J. S.
Speck. Applied Physics Letters, 74, pp. 3326–3328, (1999).
-
"Ultrafast electron dynamics study of GaN" C.-K.
Sun and Y.-L. Huang, S. Keller, U. K. Mishra, S. P. DenBaars. Physical
Review B (Condensed Matter and Materials Physics), 59, pp. 13535-13538,
(1999).
-
"High mobility two-dimensional electron gas in
AlGaN/GaN heterostructures grown by plasma-assisted molecular beam epitaxy"
C. R. Elsass, I. P. Smorchkova, B. Heying, E. Haus, P. Fini, K. Maranowski,
J. P. Ibbetson, S. Keller, P. M. Petroff, S. P. DenBaars, U. K. Mishra,
J. S. Speck. Applied Physics Letters, 74, pp. 3528–3530, (1999).
-
"Enhanced Mg doping efficiency in Al0.2Ga0.8N/GaN
superlattices" P. Kozodoy, M. Hansen, S. P. DenBaars, U. K. Mishra. Applied
Physics Letters, 74, pp. 3681–3683, (1999).
-
"The role of threading dislocations in the physical
properties of GaN and its alloys" J. S. Speck, S. J. Rosnerb. Physica
B: Condensed Matter, 273-274, pp. 24-32, (1999).
-
"AlGaN/GaN heterojunction bipolar transistor"
L. S. McCarthy, P. Kozodoy, M. J. W. Rodwell, S. P. DenBaars, U. K. Mishra.
IEEE
Electron Device Letters, 20, pp. 277-279, (1999).
-
"High-performance (Al,Ga)N-based solar-blind
ultraviolet p–i–n detectors on laterally epitaxially overgrown GaN" G.
Parish, S. Keller, P. Kozodoy, J. P. Ibbetson, H. Marchand, P. T. Fini,
S. B. Fleischer, S. P. DenBaars, U. K. Mishra, E. J. Tarsa. Applied
Physics Letters, 75, pp. 247–249, (1999).
-
"Indium tin oxide contacts to gallium nitride
optoelectronic devices" T. Margalith, O. Buchinsky, D. A. Cohen, A. C.
Abare, M. Hansen, S. P. DenBaars, L. A. Coldren. Applied Physics Letters,
74 pp. 3930–3932, (1999).
-
"Large coherent acoustic-phonon oscillation observed
in InGaN/GaN multiple-quantum wells" C.-K. Suna, J.-C. Liang, C. J. Stanton,
A. Abare, L. Coldren, S. P. DenBaars. Applied Physics Letters, 75,
pp. 1249–1251, (1999).
-
"Surface Structure of GaN(0001) in the Chemical
Vapor Deposition Environment" A. Munkholm, G. B. Stephenson, J. A. Eastman,
C. Thompson, P. Fini, J. S. Speck, O. Auciello, P. H. Fuoss, S. P. DenBaars.
Physical
Review Letter, 83, pp. 741-744, (1999).
-
"Electrically pumped distributed feedback nitride
lasers employing embedded dielectric gratings" A. C. Abare, M. Hansen,
J. S. Speck, S. P. DenBaars, L. A. Coldren. Electronics Letters,
35, pp. 1559-1560, (1999).
-
"AlGaN/GaN HBTs using regrown emitter" J. B.
Limb, L. McCarthy, P. Kozodoy, L. Xing, J. Ibbetson, Y. Smorchkova, S.
P. DenBaars, U. K. Mishra. Electronics Letters, 35, pp. 1671 – 1673,
1999).
-
"High-quality coalescence of laterally overgrown
GaN stripes on GaN/sapphire seed layers" P. Fini, L. Zhao, B. Moran, M.
Hansen, H. Marchand, J. P. Ibbetson, S. P. DenBaars, U. K. Mishra, J. S.
Speck. Applied Physics Letters, 75, pp. 1706–1708, (1999).
-
"Polarization-induced charge and electron mobility
in AlGaN/GaN heterostructures grown by plasma-assisted molecular-beam epitaxy"
I. P. Smorchkova, C. R. Elsass, J. P. Ibbetson, R. Vetury, B. Heying, P.
Fini, E. Haus, S. P. DenBaars, J. S. Speck, U. K. Mishra. Journal of
Applied Physics, 86, pp. 4520-4526, (1999).
-
"Photoluminescence and photoluminescence excitation
spectra of In/sub 0.2/Ga/0.8N-GaN quantum wells: comparison between experimental
and theoretical studies" H. Jiang, M. Minsky, S. Keller, E. Hu, J. Singh,
S. P. DenBaars. IEEE Journal of Quantum Electronics, 35, pp. 1483-1490,
1999).
-
"Polarization-enhanced Mg doping of AlGaN/GaN
superlattices" P. Kozodoy,Y. P. Smorchkova, M. Hansen, H. Xing, S. P. DenBaars,
U. K. Mishra, A. W. Saxler, R. Perrin, W. C. Mitchel. Applied Physics
Letters, 75, pp. 2444–2446, (1999).
-
"Structural and optical characteristics of InxGa1–xN/GaN
multiple quantum wells with different In compositions" Y.-H. Kwon, G. H.
Gainer, S. Bidnyk, Y. H. Cho, J. J. Song, M. Hansen, S. P. DenBaars. Applied
Physics Letters, 75, pp. 2545–2547, (1999).
-
"GaN-based FETs for microwave power amplification"
Y. F. Wu, B. P. Keller, S. Keller, J. J. Xu, B. J. Thibeault, S. P. Denbaars,
U. K. Mishra. IEICE Transactions on Electronics, E82C, 1895-1905,
(1999).
-
"Coupling of InGaN quantum-well photoluminescence
to silver surface plasmons" I. Gontijo, M. Boroditsky, E. Yablonovitch,
S. Keller, U. K. Mishra, S. P. DenBaars. Physical Review B (Condensed
Matter and Materials Physics, 60, pp. 11564-11567, (1999).
-
"Metalorganic chemical vapor deposition of high
mobility AlGaN/GaN heterostructures" S. Keller, G. Parish, P. T. Fini,
S. Heikman, C.-H. Chen, N. Zhang, S. P. DenBaars, U. K. Mishra, Y.-F. Wu.
Journal
of Applied Physics, 86, pp. 5850-5857, (1999).
-
"Femtosecond Z-scan measurement of GaN" Y.-L.
Huang, C.-K. Sun, J.-C. Liang, S. Keller, M. P. Mack, U. K. Mishra,
S. P. DenBaars. Applied Physics Letters, 75, pp. 3524–3526, (1999).
-
"Influence of Barrier Doping and Barrier Composition
on Optical Gain in (In,Ga)N MQWs" M. Vehse, P. Michler, J. Gutowski, S.
Figge, S. Hommel, H. Selke, P. L. Ryder, S. Keller, S. P. DenBaars. Physica
Status Solidi (b), 216, pp. 331-334, (1999).
-
"Optical Spectroscopy of InGaN/GaN Quantum Wells"
E. Berkowicz, D. Gershoni, G. Bahir, A.C. Abare, S.P. DenBaars, L.A. Coldren.
Physica
Status Solidi (b), 216, pp. 291-300, (1999).
-
"Effect of the Confinement Layer Design on the
Luminescence of InGaN/GaN Single Quantum Wells" S. Keller, S. B. Fleischer,
S. F. Chichibu, J. E. Bowers, U. K. Mishra, S. P. DenBaars. Physica
Status Solidi (b), 216, pp. 269-272, (1999).
-
"Photoreflectance investigations of the bowing
parameter in AlGaN alloys lattice-matched to GaN" T. J. Ochalski, B. Gil,
P. Lefebvre, N. Grandjean, M. Leroux, J. Massies, S. Nakamura, H. Morkoc.
Applied
Physics Letters, 74, pp. 3353-3355, (1999).
-
"Emission mechanisms of bulk GaN and InGaN quantum
wells prepared by lateral epitaxial overgrowth" S. F. Chichibu, H. Marchand,
M. S. Minsky, S. Keller, P. T. Fini, J. P. Ibbetson, S. B. Fleisher, J.
S. Speck, J. E. Bowers, E. Hu, U. K. Mishra, S. P. DenBaars, T. Deguchi,
T. Sota, S. Nakamura.
Applied Physics Letters, 74, pp. 1460-1462,
(1999).
-
"Violet InGaN/GaN/AlGaN-based laser diodes operable
at 50 degrees C with a fundamental transverse mode" S. Nakamura, M. Senoh,
S.-I. Nagahama, T. Matsushita, K. Kiyoku, Y. Sugimoto, T. Kozaki, H. Umemoto,
M. Sano, T. Mukai. Japanese Journal of Applied Physics, Part 2,
38, pp. L226-229, (1999).
-
"Infrared lattice absorption in wurtzite GaN"
T. Azuhata, K. Shimada, T. Deguchi, T. Sota, K. Suzuki, S. Chichibu, S.
Nakamura. Japanese Journal of Applied Physics, Part 2, 38, pp. L151-L153,
(1999).
-
"Radiative and nonradiative recombination processes
in ultraviolet light-emitting diode composed of an In/sub 0.02/Ga/sub 0.98/N
active layer" Y. Narukawa, S. Saijou, Y. Kawakami, S. Fujita, T. Mukai,
S. Nakamura. Applied Physics Letters, 74, pp. 558-560, (1999).
-
"Symmetry of electrons and holes in lightly photo-excited
InGaN LEDs" T. A. Kennedy, E. R. Glaser, W. E. Carlos, P. P. Ruden, S.
Nakamura. MRS Internet Journal of Nitride Semiconductor Research,
4S1, (1999).
-
"InGaN/GaN/AlGaN-based LEDs and laser diodes"
S. Nakamura. MRS Internet Journal of Nitride Semiconductor Research,
4S1, (1999).
p e o p l e § p u b l i c a t i o n s § l a b s § r e s e a r c h
s e m i n a r s § r e l a t e d l i n k s § c o n t a c t i n f o r m a t i o n
Last updated Tuesday, February 15, 2005
The Interdisciplinary Center for Wide Bandgap Semiconductors
The Solid State Lighting and Display Center
Copyright © 2001-2002