The Interdisciplinary Center for
Wide Bandgap Semiconductors
and
The Solid State Lighting & Display Center
P u b l i c a t i o n s
( 1 9 9 8 )
[ 2005 ] [ 2004 ] [ 2003 ] [ 2002 ] [ 2001
] [ 2000 ] [ 1999
] [ 1998 ] [ 1997 ]
[ 1996 ] [ 1995
- 1991 ]
-
"InGaN/Gan/AlGaN-based laser diodes with an estimated
lifetime of longer than 10,000 hours" S. Nakamura. MRS Bulletin,
23, pp. 37-43, (1998).
-
"Applications of LEDs and LDs" S. Nakamura. Semiconductors
&Semimetals, 50, pp. 431-457, (1998).
-
"Current and temperature dependences of electroluminescence
of InGaN-based UV/blue/green light-emitting diodes" T. Mukai, M. Yamada,
S. Nakamura.
Japanese Journal of Applied Physics, Part B, 37, pp.
L1358-L1361, (1998).
-
"Materials issues for InGaN-based lasers" S.
Nakamura. Journal of Electronic Material, 27, pp. 160-165, (1998).
-
"Near field scanning optical spectroscopy of
an InGaN quantum well" P. A. Crowell, D. K. Young, S. Keller, E. L. Hu,
D. D. Awschalom. Applied Physics Letters, 72, pp. 927-929, (1998).
-
"High-power UV InGaN/AlGaN double-heterostructure
LEDs" T. Mukai, D. Morita, S. Nakamura. Journal of Crystal Growth,
189/190, pp. 778-781, (1998).
-
"InGaN-based laser diodes" S. Nakamura. Annual
Review Materials Science, 28, pp. 125-152, (1998).
-
"Luminescence spectra from InGaN multiquantum
wells heavily doped with Si" T. Deguchi, A. Shikanai, K. Torii, T. Sota,
S. Chichibu, S. Nakamura,
Applied Physics Letters, 72, pp. 3329-3331,
(1998).
-
"Effect of the Growth rate and the barrier doping
on the morphology and the properties of InGaN/GaN quantum wells" S. Keller,
S. F. Chichibu, M. S. Minsky, E. Hu, U. K. Mishra, S. P. DenBaars. Journal
of Crystal Growth, 195, pp. 258-264, (1998).
-
"Stimulated emission characteristics of InGaN/GaN
multiple quantum wells: Excitation length and excitation density dependence"
T. J. Schmidt, S. Bidnyk, Y.-H. Cho, A. J. Fischer, J. J. Song, S. Keller,
U. K. Mishra, S. P. DenBaars. Applied Physics Letters, 73, pp. 3689-3691,
(1998).
-
"Measurement of gain current relations for InGaN
multiple quantum wells" A. C. Abare, M. P. Mack, M. Hansen, J. S. Speck,
L. A. Coldren, S. P. DenBaars, G. A. Meyer, S. L. Lehew, G. A. Cooper.
Applied
Physics Letters, 73, pp. 3887-3889, (1998).
-
"MOVPE growth and characterization of Mg-doped
GaN" P. Kozodoy, S. Keller, S. P. DenBaars U. K. Mishra. Journal of
Crystal Growth, 195, pp. 265-269, (1998).
-
"Observation of near field modal emission in
InGaN multi-quantum well laser diodes by near field scanning optical microscopy"
M. P. Mack, D. K. Young, A. C. Abare, M. Hansen, L. A. Coldren, J. S. Speck,
E. L. Hu, D. D. Awschalom, S. P. DenBaars. IEEE 16th International Semiconductor
Laser Conference (Conference Digest), 4-8, pp. 9-10, (1998).
-
"Atomic force microscopy observation of threading
dislocation density reduction in lateral epitaxial overgrowth of gallium
nitride by MOCVD" H. Marchand, J.P. Ibbetson, Paul T. Fini , Peter Kozodoy
, S. Keller, S. DenBaars , J. S. Speck, U. K. Mishra. MRS Internet Journal
Nitride Semiconductor Research, 3, 3, (1998).
-
"High Al-content AlGaN/GaN MODFETs for ultrahigh
performance" Y.-F. Wu, B. P. Keller, P. Fini, S. Keller, T. J. Jenkins,
L. T. Kehias, S. P. Denbaars, U. K. Mishra. IEEE Electron Device Letters,
19, pp. 50-53, (1998).
-
"MOCVD growth of InGaN multiple quantum well
LEDs and laser diodes" Inst. Phys. Conf. Ser., 156, pp. 367-370, (1998).
-
"AlGaN/GaN MODFETS with slow ohmic contact resistances
by source/drain n(+) regrowth" Inst. Phys. Conf. Ser., 156, pp. 431-434,
(1998).
-
"Structural origin of V-defects and correlation
with localized excitonic centers in InGaN/GaN multiple quantum wells" X.
H. Wu, C. R. Elsass, A. Abare, M. Mack, S. Keller, P. M. Petroff, S. P.
DenBaars, J. S. Speck, S. J. Rosner. Applied Physics Letters, 72,
pp. 692-694, (1998).
-
"Characterization of high-quality InGaN/GaN multiquantum
wells with time-resolved photoluminescence" M. S. Minsky, S. B. Fleischer,
A. C. Abare, J. E. Bowers, E. L. Hu, S. Keller, S. P. Denbaars. Applied
Physics Letters, 72, pp. 1066-1068, (1998).
-
"High-temperature stimulated emission in optically
pumped InGaN/GaN multiquantum wells" S. Bidnyk, T. J. Schmidt, Y. H. Cho,
G. H. Gainer, J. J. Song, S. Keller, U. K. Mishra, S. P. DenBaars. Applied
Physics Letters, 72, pp. 1623-1625, (1998).
-
"Spiral Growth of InGaN Nanoscale Islands on
GaN" S. Keller, U. K. Mishra, S. P. Denbaars, W. Seifert. Japanese Journal
Applied Physics, 37, L431-L434, (1998).
-
"Dislocation generation in GaN heteroepitaxy"
X. H. Wu, P. Fini, E. J. Tarsa, B. Heying, S. Keller, U. K. Mishra, S.
P. DenBaars, J. S. Speck.
Journal of Crystal Growth, 189-190, pp.
231-243, (1998).
-
"MOCVD growth and properties…" Materials Science
Forum, 264, pp. 1157-1160, (1998).
-
"Cleaved and etched facet nitride laser diodes"
A. C. Abare, M. P. Mack, M. Hansen, R. K. Sink, P. Kozodoy, S. Keller,
J. S. Speck, J. E. Bowers, U. K. Mishra, L. A. Coldren, S. P. DenBaars.
IEEE
Journal of Selected Topics in Quantum Electronics, 4, pp. 505-509,
(1998).
-
"Scanning capacitance microscopy imaging of threading
dislocations in GaN films grown on (0001) sapphire by metalorganic chemical
vapor deposition" P. J. Hansen, Y. E. Strausser, A. N. Erickson, E. J.
Tarsa, P. Kozodoy, E. G. Brazel, J. P. Ibbetson, U. Mishra, V. Narayanamurti,
S. P. DenBaars, J. S. Speck. Applied Physics Letters, 72, pp. 2247-2249,
(1998).
-
"Determination of the cubic to hexagonal fraction
in GaN nucleation layers using grazing incidence x-ray scattering" A. Munkholm,
C. Thompson, C. M. Foster, J. A. Eastman, O. Auciello, G. B. Stephenson,
P. Fini, S. P. DenBaars, J. S. Speck. Applied Physics Letters, 72,
pp. 2972-2974, (1998).
-
"Catastrophic optical damage in GaInN multiple
quantum wells" D. A. Cohen, T. Margalith, A. C. Abare, M. P. Mack, L. A.
Coldren, S. P. DenBaars, D. R. Clarke. Applied Physics Letters,
72, pp. 3267-3269, (1998).
-
"Improvement of GaN-based laser diode facets
by FIB polishing" M. P. Mack, G. D. Via, A. C. Abare, M. Hansen, P. K.
Kozodoy, S. Keller, J. S. Speck, U. K. Mishra, L. A. Coldren, S. P. DenBaars.
Electronics
Letters, 34, pp. 1315-1316, (1998).
-
"Piezoelectric surface barrier lowering applied
to InGaN/GaN field emitter arrays" R. D. Underwood, P. Kozodoy, S. Keller,
S. P. DenBaars, U. K. Mishra.
Applied Physics Letters, 73, pp. 405-407,
(1998).
-
"Effects of Si-doping in the barriers of InGaN
multiquantum well purplish-blue laser diodes" S. Chichibu, D. A. Cohen,
M. P. Mack, A. C. Abare, P. Kozodoy, M. Minsky, S. Fleischer, S. Keller,
J. E. Bowers, U. K. Mishra, L. A. Coldren, D. R. Clarke, S. P. DenBaars.
Applied
Physics Letters, 73, pp. 496-498, (1998).
-
"The Effect of Growth Environment on the Morphological
and Extended Defect Evolution in GaN Grown by Metalorganic Chemical Vapor
Deposition" P. Fini, X. Wu1, E. J. Tarsa, Y. Golan, V. Srikant, S. Keller,
S. P. Denbaars, J. S. Speck. Japanese Journal Applied Physics, 37,
pp. 4460-4466, (1998).
-
"Energy selective optically pumped stimulated
emission from InGaN/GaN multiple quantum wells" T. J. Schmidt, Y.-H. Cho,
G. H. Gainer, J. J. Song, S. Keller, U. K. Mishra, S. P. DenBaars. Applied
Physics Letters, 73, pp. 560-562, (1998).
-
"Morphology and microstructural evolution in
the early stages of hydride vapor phase epitaxy of GaN on sapphire" Y.
Golan, X. H. Wu, J. S. Speck, R. P. Vaudo, V. M. Phanse. Applied Physics
Letters, 73, pp. 3090-3092, (1998).
-
"Microstructure of GaN laterally overgrown by
metalorganic chemical vapor deposition" H. Marchand, X. H. Wu, J. P. Ibbetson,
P. T. Fini, P. Kozodoy, S. Keller, J. S. Speck, S. P. DenBaars, U. K. Mishra.
Applied
Physics Letters, 73, pp. 747-749, (1998).
-
"Electrical characterization of GaN p-n junctions
with and without threading dislocations" P. Kozodoy, J. P. Ibbetson, H.
Marchand, P. T. Fini, S. Keller, J. S. Speck, S. P. DenBaars, U. K. Mishra.
Applied
Physics Letters, 73, pp. 975-977, (1998).
-
"Influence of Si doping on characteristics of
InGaN/GaN multiple quantum wells" Yong-Hoon Cho, J. J. Song, S. Keller,
M. S. Minsky, E. Hu, U. K. Mishra, S. P. DenBaars. Applied Physics Letters,
73, pp. 1128-1130, (1998).
-
"Substrate Reactivity and `Controlled Contamination'
in Metalorganic Chemical Vapor Deposition of GaN on Sapphire" Y. Golan,
P. Fini, S. P. DenBaars and J. S. Speck. Japanese Journal Applied Physics,
37, pp. 4695-4703, (1998).
-
"’S’-shaped'' temperature-dependent emission
shift and carrier dynamics in InGaN/GaN multiple quantum wells" Yong-Hoon
Cho, G. H. Gainer, A. J. Fischer, J. J. Song, S. Keller, U. K. Mishra,
S. P. DenBaars. Applied Physics Letters, 73, pp. 1370-1372, (1998).
-
"Pump-probe spectroscopy of band tail states
in metalorganic chemical vapor deposition-grown InGaN" T. J. Schmidt, Yong-Hoon
Cho, G. H. Gainer, J. J. Song, S. Keller, U. K. Mishra, S. P. DenBaars.
Applied
Physics Letters, 73, pp. 1892-1894, (1998).
-
"Effective band gap inhomogeneity and piezoelectric
field in InGaN/GaN multiquantum well structures" S. F. Chichibu, A. C.
Abare, M. S. Minsky, S. Keller, S. B. Fleischer, J. E. Bowers, E. Hu, U.
K. Mishra, L. A. Coldren, S. P. DenBaars, T. Sota. Applied Physics Letters,
73, pp. 2006-2008, (1998).
-
"A First Look at AlGaN/GaN HBTs" L. McCarthy,
P. Kozodoy, M. Rodwell, S. DenBaars, U. Mishra. Compound Semiconductor
Magazine, 4, (1998).
-
"Optical Properties of InGaN/GaN Quantum Wells
with Si Doped Barriers" M. S. Minsky, S. Chichibu, S. B. Fleischer, A.
C. Abare, J. E. Bowers, E. L. Hu, S. Keller, U. K. Mishra S. P. DenBaars.
Japanese
Journal Applied Physics, 37, L1362-L136415, (1998).
-
"High-transconductance self-aligned AlGaN/GaN
modulation-doped field-effect transistors with regrown ohmic contacts"
C.-H.Chen, S. Keller, G. Parish, R. Vetury, P. Kozodoy, E. L. Hu, S. P.
Denbaars, U. K. Mishra, Y. Wu. Applied Physics Letters, 73, pp.
3147-3149, (1998).
-
"Mechanisms of lateral epitaxial overgrowth of
gallium nitride by metalorganic chemical vapor deposition" H. Marchand,
J. P. Ibbetson, P. T. Fini, S. Keller, S. P. DenBaars, J. S. Speck, U.
K. Mishra. Journal of Crystal Growth, 195, pp. 328-332, (1998).
-
"Excitation energy-dependent optical characteristics
of InGaN/GaN multiple quantum wells" Y.-H. Cho, J. J. Song, S. Keller,
U. K. Mishra, S. P. DenBaars.
Applied Physics Letters, 73, pp. 3181-3183,
(1998).
-
"Blue InGaN MQW laser diodes on sapphire" S.
P. DenBaars, A. C. Abare, M. P. Mack, M. Hansen, R. K. Sink, P. Kozodoy,
S. Keller, J. S. Speck, J. E. Bowers, U. K. Mishra, L. A. Coldren. Conference
Proceedings, pp. 346-347, (1998).
-
"InGaN/GaN/AlGaN-based laser diodes with an estimated
lifetime of longer than 10,000 hours" S. Nakamura. MRS Bulletin,
23, pp. 37-43, (1998).
-
"Bright electroluminescence from CdsS quantum
dot LED structures" S. Nakamura, K. Kitamura, H. Umeya, H. Jia, M. Kobayashi,
A. Yoshikawa, M. Shimotomai, Y. Kato, K. Takahasi. Electronics Letters,
34, pp. 2435-2436, (1998).
-
"Recombination processes in In/sub x/Ga/sub 1-x/N
light-emitting diodes studied through optically detected magnetic resonance"
E. R. Glaser, T. A. Kennedy, W. E. Carlos, P. P. Ruden, S. Nakamura. Applied
Physics Letters, 73, pp. 3123-3125, (1998).
-
"Ultrafast (200-fs switching, 1.5-Tb/s demultiplexing)
and high-repitition (10 GHz) operations of a polarization-discriminating
symmectric Mach-Zehnder all optical switch" S. Nakamura, Y. Ueno, K. Tajima.
IEEE
Photonics Technology Letters, 10, pp. 1575-1577, (1998).
-
"The mechanism of radiative recombination in
light-emitting devices composed on InGaN quantum wells" Y. Kawakami, Y.
Narukawa, K. Sawada, S. Nakamura.
Electronics and Communications in
Japan, Part 2, 81, pp. 45-56, (1998).
-
"Cathodoluminescence study of quantum microstructures"
K. Wada, S. Chichibu, S. Nakamura, T. Sota, A. Kozen, T. Murashita. Oyo
Buturi, 67, pp. 789-801, (1998).
-
"Commercial blue LDs a step closer for Nichia"
S. Nakamura. III-Vs Review, 11, pp. 28-32, (1998).
-
"Optical properties of wurtzite GaN epilayers
grown on A-plane sapphire" A. Alemu, B. Gil, M. Julier, S. Nakamura. Physical
Review B, 57, pp. 3761-3764, (1998).
-
"Gain spectroscopy of continuous wave InGaN multi-quantum
well laser diodes" T. Deguchi, T. Azuhata, T. Sota, S. Chichibu, M. Arita,
H. Nakahashi, S. Nakamura. Semiconductor Science and Technology,
13, pp. 97-101, (1998).
-
"The mechanism of radiative recombination in
light emitting devices composed of InGaN quantum wells" Y. Kawakami, Y.
Narukawa, K. Sawada, S. Saijyo, S. Fujita, S. Fujita, S. Nakamura. Transactions
of the Institute of Electronics, Information and Communication Engineers,
J81C-II, pp. 78-88, (1998).
-
"Amber InGaN-based light-emitting diodes operable
at high-ambient temperatures" T. Mukai, H. Narimatsu, S. Nakamura. Japanese
Journal of Applied Physics, Part 2, 37, pp. L479-L481, (1998).
-
"Role of dopants and impurities on pinhole formation;
defects formed at InGaN/GaN and AlGaN/GaN quantum wells" Z. L. Weber, S.
Ruvimov, W. Swider, Y. Kim,J. Washburn, S. Nakamura, R. S. Kern, Y. Chen,
J. W. Yang. Materials Research Society Symposium Proceedings, 482,
pp. 375-380, (1998).
-
"Time-resolved electroluminesence spectroscopy
of InGaN single quantum wells" Y. Narukawa, S. Saijyo, Y. Kawakami, Sz.
Fujita, Sg. Fujita, S. Nakamura. Journal of Crystal Growth, 189/190,
pp. 593-596, (1998).
-
"Emission mechanism of localized excitons in
InGaN single quantum wells" Y. Narukawa, K. Sawada, Y. Kawakami, Sz. Fujita,
Sg. Fujita, S. Nakamura.
Journal of Crystal Growth, 189/190, pp.
606-610, (1998).
-
"Magnetic resonance studies of GaN-based LEDs"
W. E. Carlos, S. Nakamura.
Journal of Crystal Growth, 189/190, pp.
794-797, (1998).
-
"Frequency dependence of the reverse-biased capacitance
of blue and green light-emitting diodes" Y. Zohta, H. Kuroda, R. Nii, S.
Nakamura. Journal of Crystal Growth, 189/190, pp. 816-819, (1998).
-
"Present status of InGaN/GaN/AlGaN-based laser
diodes" S. Nakamura, M. Senoh, S. Nagahama, N. Iwasa, T. Yamada, T. Matsushita,
H. Kiyoku, Y. Sugimoto, T. Kozaki, H. Umemoto, M. Sano, K. Chocho. Journal
of Crystal Growth, 189/190, pp. 820-825, (1998).
-
"High-power InGaN-based blue laser diodes with
a long lifetime" S. Nakamura.
Journal of Crystal Growth, 195, pp.
242-247, (1998).
-
"Recent developments in InGaN-based LEDs and
LDs" S. Nakamura. Acta Physica Polonica A, 95, pp. 153-164, (1998).
-
"InGaN/GaN/AlGaN-based laser diodes grown on
GaN substrates with fundamental transverse mode" S. Nakamura, M. Senoh,
S.-I. Nagahama, N. Iwasa, T. Yamada, T. Matsushita, H. Kiyoku, Y. Sugimoto,
T. Kozaki, I. Umemoto, M. Sano, K. Chocho. Japanese Journal of Applied
Physics, Part2, 37, pp. L1020-L1022, (1998).
-
"Photo-enhanced activation of hydrogen-passivated
magnesium in p-type GaN films" Y. Kamiura, Y. Yamashita, S. Nakamura. Japanese
Journal of Applied Physics, Part2, 37, pp. L970-L971, (1998).
-
"The roles of structural imperfections in InGaN/GaN/AlGaN-based
laser diodes grown on GaN substrates with a fundamental transverse mode"
S. Nakamura.
Science, 281, pp. 956-961, (1998).
-
"InGaN/GaN/AlGaN-based laser diodes with cleaved
facets grown on GaN substrates" S. Nakamura, M. Senoh, S. Nagahama, N.
Iwasa, T. Yamada, T. Matsushita, H. Kiyoku, Y. Sugimoto, T. Kozaki, H.
Umemoto, M. Sano, K. Chocho. Applied Physics Letters, 73, pp. 832-834,
(1998).
-
"InGaN-based blue light-emitting diodes grown
on epitaxially laterally overgrown GaN substrates" T. Mukai, K. Takekawa,
S. Nakamura. Japanese Journal of Applied Physics, Part 2, 37, pp.
L839-L841, (1998).
-
"Cathodoluminescence study of quantum microstructures"
K. Wada, S. Chichibu, S. Nakamura, T. Sota, A. Kozen, T. Murashita. Oyo
Buturi, 67, pp. 798-801, (1998).
-
"Violet InGaN/GaN/AlGaN-based laser diodes with
an output power of 420 mW" S. Nakamura, M. Senoh, S.-I. Nagahama, N. Iwasa,
T. Yamada, T. Matsushita, H. Kiyoku, Y. Sugimoto, T. Kozaki, H. Umemoto,
M. Sano, K. Chocho. Japanese Journal of Applied Physics, Part 2,
37, pp. L627-L629, (1998).
-
"Progress with GaN-based blue/green LEDs and
bluish purple semiconductor LDs" S. Nakamura. Electronics and Communications
in Japan, Part 2, 81, pp. 1-8, (1998).
-
"InGaN multiquantum-well-structure laser diodes
with GaN-AlGaN modulation-doped strained layer superlattices" S. Nakamura.
IEEE
Journal of Selected Topics in Quantum Electronics, 4, pp. 483-489,
(1998).
-
"Continuous-wave operation of InGaN/GaN/AlGaN-based
laser diodes grown on GaN substrates" S. Nakamura, M. Senoh, S.-I. Nagahama,
N. Iwasa, T. Yamada, T. Matsushita, H. Kiyoku, Y. Sugimoto, T. Kozaki,
H. Umemoto, M. Sano, K. Chocho. Applied Physics Letters, 72, pp.
2014-2016, (1998).
-
"High-power, long-lifetime InGaN/GaN/AlGaN-based
laser diodes grown on pure GaN substrates" S. Nakamura, M. Senoh, S. Nagahama,
N. Iwasa, T. Yamada, T. Matsushita, H. Kiyoku, Y. Sugimoto, T. Kozaki,
H. Uimemoto, M. Sang, K. Chocho. Japanese Journal of Applied Physics,
Part 2, 37, pp. L309-L312, (1998).
-
"Determination of the spin-exchange interaction
constant in wurtzite GaN" M. Julier, J. Campo, B. Gil, J. P. Lascaray,
S. Nakamura. Physical Review B (Condensed Matter), 57, pp. R6791-R6794,
(1998).
-
"Optical properties of wurtzite GaN epilayers
grown on A-plane sapphire" A. Alemu, B. Gil, M. Julier, S. Nakamura. Physical
Review B (Condensed Matter), 57, pp. 3761-3764, (1998).
-
"InGaN/GaN/AlGaN-based laser diodes with modulation-doped
strained-layer superlattices grown on an epitaxially laterally overgrown
GaN substrate" S. Nakamura, M. Senoh, S.-I. Nagahama, N. Iwasa, T. Yamada,
T. Matsushita, H. Kiyoku, Y. Sugimoto, T. Kozaki, H. Umemoto, M. Sano,
K. Chocho. Applied Physics Letters, 72, pp. 211-213, (1998).
-
"Determination of the atomic structure of inversion
domain boundaries in alpha-GaN by transmission electron microscopy" D.
Cherns, W. T. Young, M. Sanders, J. W. Steeds, F. A. Ponce, S. Nakamura.
Philosophical
Magazine A (Physics of Condensed Matter: Structure, Defects and Mechanical
Properties), 77, pp. 273-286, (1998).
-
"Progress if GaN-based blue/green LEDs and bluish
–purple semiconductor LDs" S. Nakamura. Transactions of the Institute
of Electronics, Information and Communication Engineers, J81C-II, pp.
89-96, (1998).
-
"On the gain mechanism in GaN based laser diodes"
G. Mohs, A. T. Aoki, R. Shimano, U. M. Kuwata-Gonokami, S. Nakamura. Solid
State Communications, 108, pp. 105-110, (1998).
p e o p l e § p u b l i c a t i o n s § l a b s § r e s e a r c h
s e m i n a r s § r e l a t e d l i n k s § c o n t a c t i n f o r m a t i o n
Last updated Tuesday, February 15, 2005
The Interdisciplinary Center for Wide Bandgap Semiconductors
The Solid State Lighting and Display Center
Copyright © 2001-2002