The Interdisciplinary Center for
Wide Bandgap Semiconductors
and
The Solid State Lighting & Display Center
P u b l i c a t i o n s
( 1 9 9 6 )
[ 2005 ] [ 2004 ] [ 2003 ] [ 2002 ] [ 2001
] [ 2000 ] [ 1999
] [ 1998 ] [ 1997
] [ 1996 ] [ 1995 - 1991
]
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"InGaN-based multi-quantum-well-structure laser
diodes" S. Nakamura, M. Senoh, S. Nagahama, N. Iwasa, T. Yamada, T. Matsushita,
H. Kiyoku, Y. Sugimoto.
Japanese Journal of Applied Physics, Part 2,
35, pp. L74-L76, (1996).
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"InGaN multi-quantum-well-structure laser diodes
with cleaved mirror cavity facets" S. Nakamura, M. Senoh, S. Nagahama,
N. Iwasa, T. Yamada, H. Kiyoku, Y. Sugimoto. Japanese Journal of Applied
Physics, Part 2, 35, pp. L217-L220, (1996).
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"InGaN multi-quantum-well-structure laser diodes
grown on MgAl(sub 2)O(sub 4) substrates" S. Nakamura, N. Senoh, S. Nagahama,
N. Iwasa, T. Yamada, T. Matsushita, H. Kiyoku, Y. Sugimoto. Applied
Physics Letters, 68, pp. 2105-2107, (1996).
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"InGaN-based blue/green LEDs and laser diodes"
S. Nakamura. Advanced Material, 8, pp. 689-692, (1996).
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"Ridge geometry InGaN multi-quantum-well-structure
laser diodes" S. Nakamura, M. Senoh, S. Nagahama, N. Iwasa, T. Yamada,
T. Matsushita, Y. Sugimoto, H. Kiyoku. Applied Physics Letters,
69, pp. 1477-1479, (1996).
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"Optical gain and carrier lifetime of InGaN multi-quantum
well structure laser diodes" S. Nakamura, M. Senoh, S. Nagahama, N. Iwasa,
T. Yamada, T. Matsushita, Y. Sugimoto, H. Kiyoku. Applied Physics Letters,
69, pp. 1568-1570, (1996).
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"Continuous-wave operation of InGaN multi-quantum-well-structure
laser diodes at 233K" S. Nakamura, M. Senoh, S. Nagahama, N. Iwasa, T.
Yamada, T. Matsushita, Y. Sugimoto, H. Kiyoku. Applied Physics Letters,
69, pp. 3034-3036, (1996).
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"Room-temperature continuous wave operation of
InGaN multi-quantum well structure" S. Nakamura, M. Senoh, S. Nagahama,
N. Iwasa, T. Yamada, T. Matsushita, Y. Sugimoto, H. Kiyoku. Applied
Physics Letters, 69, pp. 4056-4058, (1996).
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"Spontaneous emission of localized excitons in
InGaN single and multiquantum well structures" S. Chichibu, T. Azuhata,
T. Sota, S. Nakamura. Applied Physics Letters, 69, pp. 4188-4190,
(1996).
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"Optical phonons in GaN" T. Azuhata, T. Matsunaga,
K. Shimada, K. Yoshida, T. Sota, K. Suzuki, S. Nakamura. Physica B,
219-220, pp. 493-495, (1996).
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"III-V nitride-based light-emitting diodes" S.
Nakamura. Diamond and Related Materials, 5, pp. 496-500, (1996).
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"Recombination dynamics of excitons and biexcitons
in a hexagonal GaN epitaxial layer" Y. Kawakami, Z. G. Peng, Y. Narukawa,
S. Fujita, S. Fujita, S. Nakamura.
Applied Physics Letters, 69,
pp. 1414-1416, (1996).
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"Growth and characterization of bulk InGaN films
and quantum wells" S. Keller, B. P. Keller, D. Kapolonek, A. C. Abare,
H. Masui, L. A. Coldren, U. K. Mishra. Applied Physics Letters,
68, pp. 3147-3149, (1996).
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"Effects of biaxial strain on exciton resonance
energies of hexagonal GaN heteroepitaxial layers" S. Chichibu, A. Shikanai,
T. Azuhata, T. Sota, A. Kuramata, K. Horino, S. Nakamura. Applied Physics
Letters, 68, pp. 3766-3768, (1996).
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"Biexciton luminescence from GaN epitaxial layers"
K. Okada, Y. Yamada, T. Taguchi, F. Sasaki, S. Kobayashi, T. Tani, S. Nakamura,
G. Shinomiya.
Japanese Journal of Applied Physics, Part 2, 35, pp.
L787-L789, (1996).
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"Characteristics of InGaN multi-quantum-well-structure
laser diodes" S. Nakamura, M. Senoh, S. Nagahama, N. Iwasa, I. Yamada,
T. Matsushita, H. Kiyoku, Y. Sugimoto. Applied Physics Letters,
68, pp. 3269-3271, (1996).
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"Excitonic emissions from hexagonal GaN epitaxial
layers" S. Chichibu, T. Azuhata, T. Sota, S. Nakamura. Journal of Applied
Physics, 79, pp. 2784-2786, (1996).
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"Luminescence spectra of superbright blue and
green InGaN/AlGaN/GaN light-emitting diodes" K. G. Zolina, V. E. Kudryashov,
A. N. Turkin, A. E. Yunovich, S. Nakamura. MRS Internet Journal of Nitride
Semiconductor Research, 1, pp. , (1996).
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"Role of threading dislocation structure on the
x-ray diffraction peak widths in epitaxial GaN films" B. Heying, X. H.
Wu, S. Keller, Y. Li, D. Kapolnek, B. P. Keller, S. P. DenBaars, J. S.
Speck. Applied Physics Letters, 68, pp. 643-645, (1996).
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"Effect of the Trimethylgallium Flow during Nucleation
Layer Growth on the Properties of GaN Grown on Sapphire" S. Keller, D.
Kapolnek, B. P. Keller, Y. Wu, B. Heying, J. S. Speck, U. K. Mishra, S.
P. Denbaars. Japanese Journal Applied Physics, 35, pp. L285-L288,
(1996).
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"Nucleation layer evolution in metal-organic
chemical vapor deposition grown GaN" X. H. Wu, D. Kapolnek, E. J. Tarsa,
B. Heying, S. Keller, B. P. Keller, U. K. Mishra, S. P. DenBaars, J. S.
Speck. Applied Physics Letters, 68, pp. 1371-1373, (1996).
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"Influence of sapphire nitridation on properties
of gallium nitride grown by metalorganic chemical vapor deposition" S.
Keller, B. P. Keller, Y.-F. Wu, B. Heying, D. Kapolnek, J. S. Speck, U.
K. Mishra, S. P. DenBaars.
Applied Physics Letters, 68, pp. 1525-1527,
(1996).
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"Low interface trap density for remote plasma
deposited SiO2 on n-type GaN" H. C. Casey, Jr., G. G. Fountain, R. G. Alley,
B. P. Keller, S. P. DenBaars. Applied Physics Letters, 68, pp. 2147-2149,
(1996).
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"Cleaved GaN facets by wafer fusion of GaN to
InP" R. K. Sink, S. Keller, B. P. Keller, D. I. Babi, A. L. Holmes, D.
Kapolnek, S. P. DenBaars, J. E. Bowers, X. H. Wu, J. S. Speck. Applied
Physics Letters, 68, pp. 2147-2149, (1996).
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"Photocurrent decay in n-type GaN thin films"
C. H. Qiu, W. Melton, M. W. Leksono, J. I. Pankove, B. P. Keller, S. P.
DenBaars. Applied Physics Letters, 69, pp. 1282-1284, (1996).
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"Measured microwave power performance of AlGaN/GaN
MODFET" Y.-F. Wu, B. P. Keller, S. Keller, D. Kapolnek, S. P. DenBaars,
U. K. Mishra. IEEE Electron Device Letters, 17, pp. 455-457, (1996).
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"Very high breakdown voltage and large transconductance
realized on GaN heterojunction field effect transistors" Y.-F. Wu, B. P.
Keller, S. Keller, D. Kapolnek, P. Kozodoy, S. P. DenBaars, U. K. Mishra.
Applied
Physics Letters, 69, pp. 1438-1440, (1996).
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"Defect structure of metal-organic chemical vapor
deposition-grown epitaxial (0001) GaN/Al2O3" X. H. Wu, L. M. Brown, D.
Kapolnek, S. Keller, B. Keller, S. P. DenBaars, J. S. Speck. Journal
of Applied Physics, 80, pp. 3228-3237, (1996).
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"Radiative recombination lifetime measurements
of InGaN single quantum well" C.-K. Sun, S. Keller, G. Wang, M. S. Minsky,
J. E. Bowers, S. P. DenBaars. Applied Physics Letters, 69, pp. 1936-1938,
(1996).
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"Room-temperature photoenhanced wet etching of
GaN" M. S. Minsky, A. M. White, E. L. Hu. Applied Physics Letters,
68, pp. 1531-1533, (1996).
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"Morphological and structural transitions in
GaN films grown on sapphire by metal-organic chemical vapor deposition"
X. H. Wu, P. Fini, S. Keller, E. J. Tarsa, B. Heying, U. K. Mishra, S.
P. DenBaars. Japanese Journal Applied Physics, 35, pp. L1648-1651,
(1996).
p e o p l e § p u b l i c a t i o n s § l a b s § r e s e a r c h
s e m i n a r s § r e l a t e d l i n k s § c o n t a c t i n f o r m a t i o n
Last updated Tuesday, February 15, 2005
The Interdisciplinary Center for Wide Bandgap Semiconductors
The Solid State Lighting and Display Center
Copyright © 2001-2002