The Interdisciplinary Center for
Wide Bandgap Semiconductors
and
The Solid State Lighting & Display Center
P u b l i c a t i o n s
( 2 0 0 0 )
[ 2005 ] [ 2004 ] [ 2003 ] [ 2002 ] [ 2001
] [ 2000 ] [ 1999 ]
[ 1998 ] [ 1997
] [ 1996 ] [ 1995
- 1991 ]
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"Measured and calculated radiative lifetime and
optical absorption of InxGa1-xN/GaN quantum structures" E. Berkowicz, D.
Gershoni, G. Bahir, E. Lakin, D. Shilo, E. Zolotoyabko, A. C. Abare, S.
P. Denbaars, L. A. Coldren. Physical Review B (Condensed Matter and
Materials Physics), 61, pp. 10994-11008, (2000).
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"Transient processes in AlGaN/GaN heterostructure
field effect transistors" S. L. Rumyantsev, M. S. Shur, T. Gaska, X. Hu,
A. Khan, G. Simin, J. Yang, N. Zhang, S. DenBaars, U. K. Mishra. Electronics
Letters, 36, pp. 757-759, (2000).
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"Charge control and mobility in AlGaN/GaN transistors:
Experimental and theoretical studies" Y. Zhang, I. P. Smorchkova, C. R.
Elsass, S. Keller, J. P. Ibbetson, S. Denbaars, U. K. Mishra, J. Singh.
Journal
of Applied Physics, 87, pp. 7981-7987, (2000).
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"Optically and thermally detected deep levels
in n-type Schottky and p+-n GaN diodes" I. Hierro, D. Kwon, S. A. Ringel,
M. Hansen, J. S. Speck, U. K. Mishra, S. P. DenBaars. Applied Physics
Letters, 76, pp. 3064-3066, (2000).
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"Determination of tilt in the lateral epitaxial
overgrowth of GaN using X-ray diffraction" P. Fini, H. Marchand, J. P.
Ibbetson, S. P. DenBaars, U. K. Mishra, J. S. Speck. Journal of
Crystal Growth, 209, pp. 581-590, (2000).
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"InGaN-based laser diodes" S. Nakamura. Japan
Society of Applied Physics International, 1, (2000).
-
"Comparison of optical properties of GaN/AlGaN
and InGaN/AlGaN single quantum wells" S. F. Chichibu, A. Shikanai, T. Deguchi,
A. Setoguchi, R. Nakai, H. Nakanishi, K. Wada, S. P. DenBaars, T. Sota,
S. Nakamura. Japanese Journal of Applied Physics, Part 1, 39, pp.
2417-2424, (2000).
-
"Role of alloy fluctuations in InGaN-based LEDs
and laser diodes" S. Nakamura.
Materials Science Forum, 338-342,
pp. 1609-1614, (2000).
-
"Effective localization of quantum well excitons
in InGaN quantum well structures with high InN fraction" S. F. Chichibu,
A. Setoguchi, T. Azuhata, J. Mullhauser, M. Sugiyama, T. Mizutani, T. Deguchi,
H. Nakanishi, T. Sota, O. Brandt, K. H. Ploog, T. Mukai, S. Nakamura. Physical
Status Solidi A, 180, pp. 321-325, (2000).
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"Localized quantum well excitons in InGaN single quantum-well
amber light-emitting diodes" S. F. Chichibu, T. Azuhata, T. Sota, T. Mukai,
S. Nakamura. Journal of Applied Physics, 88, pp. 5153-5157, (2000).
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"InGaN-based UV/blue/green LED and LD structure"
S. Nakamura. Handbook of Thin Film Devices, 2 Semiconductor Optical
and Electro-Optical Devices, pp. 225-263, (2000).
-
"A 3-10-GHz GaN-based flip chip integrated broad
band power amplifier" J. J. Xu, S. Keller, G. Parish, S. Heikman,
U. K. Mishra, R. A. York. IEEE Transactions on Microwave Theory and
Techniques, 48, pp. 2573-2578, (2000).
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"Two-dimensional electron-gas AlN/GaN heterostructures
with extremely thin AlN barriers" I. P. Smorchkova, S. Keller, S. Heikman,
C. R. Elsass, B. Heying, P. Fini, J. S. Speck, U. K. Mishra. Applied
Physics Letters, 77, pp. 3998-4000, (2000).
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"Anomolous drain current-voltage characteristics
in AlGaN/GaN MODFETs at low temperatures" G. A. Umana-Membreno, J. M. Dell,
Y.-F. Wu, G. Parish, U. K. Mishra. Microelectronics Journal, 31,
pp. 531-536, (2000).
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"Scattering mechanisms limiting two-dimensional
electron gas mobility in Al/sub 0.25/Ga/sub 0.75/GaN modulation–doped field-effect
transistors" J. Antoszewski, M. Gracey, J. M. Dell, L. Faraone, T. A. Fisher,
G. Parish, Y.-F. Wu, U. K. Mishra. Journal of Applied Physics, 87,
pp. 3900-39004, (2000).
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"Dipole scattering in polarization induced III-V
nitride two-dimensional electron gases" D. Jena, A. C. Gossard, U. K. Mishra.
Journal
of Applied Physics, 88, pp. 4734-4738, (2000).
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"Dual-gate AlGaN/GaN modulation-doped field-effect
transistors with cut-off frequencies f/sub T/<60 GHz" C.-H. Chen; R.
Coffie, K. Krishnamurthy, S. Keller, M. Rodwell, U. K. Mishra. IEEE
Electron Device Letters, 21, pp. 549-551, (2000).
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"Spectral electroluminescence mapping of a blue
InGaN single quantum well light-emitting diode" P. Fischer, J. Christen,
S. Nakamura. Japanese Journal of Applied Physics, 39, pp. L129-L132,
(2000).
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"Forward Raman scattering by quasilongitudinal
optical phonons in GaN" T. Azuhata, M. Ono, K. Torii, T. Sota, S. F. Chichibu,
S. Nakamura. Journal of Applied Physics, 88, pp. 5202-50205, (2000).
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"Raman scattering from phonon-polaritons in GaN"
K. Torii, M. Ono, T. Sota, T. Azuhata, S. F. Chichibu, S. Nakamura. Physical
Review B (Condensed Matter), 62, pp. 10861-10866, (2000).
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"Optimization of the surface morphologies and
electron mobilities in GaN grown by plasma-assisted molecular beam epitaxy"
B. Heying, I. Smorchkova,C. Poblenz, C. Elsass, P. Fini, S. Den Baars,
U. Mishra, J. S. Speck. Applied Physics Letters, 77, pp. 2885-2887,
(2000).
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"Transition between the 1¥1 and (3 x 2 3)R30
surface structures of GaN in the vapor-phase environment" A. Munkholm,
C. Thompsonb, G. B. Stephenson, J. A. Eastman, O. Aucielloc, P. Fini, J.
S. Speck, S. P. DenBaars. Physica B: Condensed Matter, 283, pp.
217-222, (2000).
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"Channeling as a mechanism for dry etch damage
in GaN" E. D. Haberer, C.-H. Chen, A. Abare, M. Hansen, S. Denbaars, L.
Coldren, U. Mishra, E. L. Hu.
Applied Physics Letters, 76, pp. 3941-3943,
(2000).
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"In situ, real-time measurement of wing
tilt during lateral epitaxial overgrowth of GaN" P. Fini, A. Munkholm,
Carol Thompson, G. B. Stephenson, J. A. Eastman, M. V. Ramana Murty, O.
Auciello, L. Zhao, S. P. DenBaars, J. S. Speck. Applied Physics Letters,
76, pp. 3893-3895, (2000).
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"Polarization effects, surface states, and the
source of electrons in AlGaN/GaN heterostructure field effect transistors"
J. P. Ibbetson, P. T. Fini, K. D. Ness, S. P. DenBaars, J. S. Speck, U.
K. Mishra. Applied Physics Letters, 77, pp. 250-252, (2000).
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"Ultrafast optical characterization of carrier
capture times in In/sub x/Ga/sub 1-x/N multiple quantum wells" Ü.
Özgür, M. J. Bergmann, H. C. Casey, H. O. Everette, A. C. Abare,
S. Keller, S. P. DenBaars. Applied Physics Letters, 77, pp. 109-111,
(2000).
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"High breakdown GaN HEMT with overlapping gate
structure" N.-Q. Zhang, S. Keller, G. Parish, S. Heikman, S. P. DenBaars,
U. K. Mishra. IEEE Electron Device Letters, 21, pp. 373-375,
(2000).
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"Hydrogen passivation of deep levels in n-GaN"
A. Hierro and S. A. Ringel, M. Hansen, J. S. Speck, U. K. Mishra, S. P.
DenBaars. Applied Physics Letters, 77, pp. 1499-1501, (2000).
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"Layer-by-layer growth of GaN induced by silicon"
A. Munkholm, C. Thompson, M. V. Ramana Murty, J. A. Eastman, O. Auciello,
G. B. Stephenson, P. Fini, S. P. DenBaars, J. S. Speck. Applied Physics
Letters, 77, pp. 1626-1628, (2000).
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"Scanning second-harmonic/third-harmonic generation
microscopy of gallium nitride" C.-K. Sun, S.-W. Chu, S.-P. Tai, S. Keller,
U. K. Mishra, S. P. DenBaars. Applied Physics Letters, 77, pp. 2331-2333,
(2000).
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"Backside-illuminated photoelectrochemical etching
for the fabrication of deeply undercut GaN structures" A. R. Stonas, P.
Kozodoy, H. Marchand, P. Fini, S. P. DenBaars, U. K. Mishra, E. L. Hu.
Applied
Physics Letters, 77, pp. 2610-2612, (2000).
-
"Dislocation reduction in GaN films through selective
island growth of InGaN" S. Keller, G. Parish, J. S. Speck, S. P. DenBaars,
U. K. Mishra.
Applied Physics Letters, 77, pp. 2665-2667, (2000).
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"Step bunching on the vicinal GaN(0001) surface"
M. V. Ramana Murty, P. Fini, G. B. Stephenson, C. Thompson, J. A. Eastman,
A. Munkholm, O. Auciello, R. Jothilingam, S. P. DenBaars, J. S. Speck.
Physical
Review B (Condensed Matter and Materials Physics), 62, pp. R10661-R10664,
(2000).
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"Two-photon absorption study of GaN" C.-K. Sun,
J.-C. Liang, J.-C. Wang, F.-J. Kao, S. Keller, M. P. Mack, U. Mishra, S.
P. DenBaars. Applied Physics Letters, 76, pp. 439-441, (2000).
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"Large near resonance third order nonlinearity
in GaN" C.-K. Sun, Y.-L. Huang, J.-C. Liang, J.-C. Wang, K.-G. Gan, F.-J.
Kao, S. Keller, M. P. Mack, U. Mishra, S. P. Denbaars. Optical and Quantum
Electronics, 32, pp. 619-640, (2000).
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"Comparison Study of Structural and Optical Properties
of InxGa1-xN/GaN Quantum Wells With Different In Compositions" Y.-H. Kwon,
G. H. Gainer, S. Bidnyk, Y. H. Cho, J. J. Song, M. Hansen, S. P. DenBaars.
MRS
Internet Journal Nitride Semiconductor Research, 5S1, W12.7, (2000).
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"Deep Levels in n-Type Schottky and p+-n Homojunction
GaN Diodes" Adrian Hierro, D. Kwon, S. A. Ringel, M. Hansen, U. K. Mishra,
S. P. DenBaars, J. S. Speck. MRS Internet Journal Nitride Semiconductor
Research, 5S1, W11.80, (2000).
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"Electrical Transport of an AlGaN/GaN Two-Dimensional
Electron Gas" A. W. Saxler, P. Debray, R. E. Perrin, S. Elhamri, W. C.
Mitchel, C. R. Elsass, I. P. Smorchkova, B. Heying, E. Haus, P. Fini, J.
P. Ibbetson, S. Keller, P. M. Petroff, S. P. DenBaars, U. K. Mishra, J.
S. Speck. MRS Internet Journal Nitride Semiconductor Research, 5S1,
W11.10, (2000).
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"Fabrication and Characterization of GaN Junction
Field Effect Transistors" L. Zhang, L. F. Lester, A. G. Baca, R. J. Shul,
P. C. Chang, C. G. Willison, U. K. Mishra, S. P. Denbaars, J. C. Zolper.
MRS
Internet Journal Nitride Semiconductor Research, 5S1, W4.9, (2000).
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"Polarity Determination for MOCVD Growth of GaN
on Si(111) by Convergent Beam Electron Diffraction" L. Zhao, H. Marchand,
P. Fini, S. Denbaars, U. Mishra, J. Speck. MRS Internet Journal Nitride
Semiconductor Research, 5S1, W3.3, (2000).
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"Effect of AlGaN/GaN Strained Layer Superlattice
Period on InGaN MQW Laser Diodes" M. Hansen, A.C. Abare, P. Kozodoy, T.
M. Katona, M. D. Craven, J. S. Speck, U. K. Mishra, L. A. Coldren, S. P.
DenBaars. MRS Internet Journal Nitride Semiconductor Research, 5S1,
W1.4, (2000).
-
"Improved characteristics of InGaN multi-quantum
well laser diodes grown on laterally epitaxially overgrown GaN on sapphire"
M. Hansen, P. Fini, L. J. Zhao, L. A. Coldren, J. S. Speck, S. P. DenBaars.
MRS
Internet Journal Nitride Semiconductor Research, 5S1, W1.3, (2000).
-
"Persistent photoconductivity study in a high
mobility AlGaN/GaN heterostructure" S. Elhamri, A. Saxler, W. C. Mitchel,
C. R. Elsass, I. P. Smorchkova, B. Heying, E. Haus, P. Fini, J. P. Ibbetson,
S. Keller, P. M. Petroff, S. P. DenBaars, U. K. Mishra, J. S. Speck. Journal
of Applied Physics, 88, pp. 6583-6588, (2000).
-
"Growth and characterization of graded AlGaN
conducting buffer layers on n+ SiC substrates" B. Moran, M. Hansen, M.
D. Craven, J. S. Speck, S. P. DenBaars. Journal of Crystal Growth,
221, pp. 301-304, (2000).
-
"Two-step growth of high-quality GaN by hydride
vapor epitaxy" P. R. Tavernier, E. V. Etzkorn, Y. Wang, D. R. Clarke. Applied
Physics Letters, 77, pp. 1804-1806, (2000).
-
"Electron Transport in AlGaN/GaN Heterostructures
Grown by Plasma-Assisted Molecular Beam Epitaxy" C. R. Elsass, I. P. Smorchkova,
B. Heying, E. Haus, C. Poblenz, P. Fini, K. Maranowski, P. M. Petroff,
S. P. DenBaars, U. K. Mishra, J. S. Speck, A. Saxler, S. Elhamri, W. C.
Mitchel. Japanese Journal Applied Physics, 39, pp. L1023-L1025,
(2000).
-
"Effects of growth conditions on the incorporation
of oxygen in AlGaN layers grown by plasma assisted molecular beam epitaxy"
C. R. Elsass, T. Mates, B. Heying, C. Poblenz, P. Fini, P. M. Petroff,
S. P. DenBaars, J. S. Speck.
Applied Physics Letters, 77, pp. 3167-3169,
(2000).
-
"In situ studies of the effect of silicon on
GaN growth modes" A. Munkholm, G. B. Stephenson, J. A. Eastman, O. Auciellob,
M. V. Ramana Murty, C. Thompson, P. Fini, J. S. Speck, S. P. DenBaars.
Journal
of Crystal Growth, 221, pp. 98-105, (2000).
-
"Structural analysis of In/sub x/Ga/sub 1-x/N
single quantum well" M. Sumiya, S. Nakamura, S. F. Chichibu, K. Mizuno,
M. Furusawa, M. Yoshimoto. Applied Physics Letters, 77, pp. 2512-2514,
(2000).
-
"An attenuated-total-reflection study on the
surface phonon-polariton in GaN" K. Torii, T. Koga, T. Sota, T. Azuhata,
S. F. Chichibu, S. Nakamura.
Journal of Physics: Condensed Matter,
12, pp. 7041-7044, (2000).
-
"Depletion region effects in Mg-doped GaN" P.Kozodoy,
S. P. DenBaars, U. K. Mishra. Journal of Applied Physics, 87, pp.
770-775, (2000).
-
"Heavy doping effects in Mg-doped GaN" P. Kozodoy,
H. Xing, S. P. DenBaars, U. K. Mishra, A. Saxler, R. Perrin, S. Elhamri,
W. C. Mitchel. Journal of Applied Physics, 87, pp. 1832-1835, (2000).
-
"Improved characteristics of InGaN multiple-quantum-well
laser diodes grown on laterally epitaxially overgrown GaN on sapphire"
M. Hansen, P. Fini, L. Zhao, A. C. Abare, L. A. Coldren, J. S. Speck, S.
P. DenBaars. Applied Physics Letters, 76, pp. 529-531, (2000).
-
"Mg doping of GaN layers grown by plasma-assisted
molecular-beam epitaxy" I.P. Smorchkova, E. Haus, B. Heying, P. Kozodoy,
P. Fini, J. P. Ibbetson, S. Keller, S. P. DenBaars, J. S. Speck, U. K.
Mishra. Applied Physics Letters, 76, pp. 718-720, (2000).
-
"Structural and optical properties of GaN laterally
overgrown on Si(111) by metalorganic chemical vapor deposition using an
AlN buffer layer" H. Marchand, N. Zhang, L. Zhao, Y. Golan, S. J. Rosner,
G. Girolami, Paul T. Fini, J.P. Ibbetson, S. Keller, S. DenBaars,
J. S. Speck, U. K. Mishra. MRS Internet Journal Nitride Semiconductor
Research, 4, 2 (1999).
-
"Epitaxially-grown GaN junction field effect
transistors" L. Zhang, L.F. Lester, A.G. Baca, R. J. Shul, P.C. Chang,
C. G. Willison, U. K. Mishra, S. P. DenBaars, J. C. Zolper. IEEE Transactions
on Electron Devices, 47, pp. 507-511, (2000).
-
"Linear and nonlinear optical properties of InxGa1-xN/GaN
heterostructures" Y.-H. Cho, T. J. Schmidt, S. Bidnyk, G. H. Gainer, J.
J. Song, S. Keller, U. K. Mishra, S. P. DenBaars. Physical Review B
(Condensed Matter and Materials Physics), 61, pp. 7571-7588, (2000).
-
"Determination of second-order nonlinear optical
susceptibility of GaN films on sapphire" T. Fujita, T. Hasegawa, M. Haraguchi,
T. Okamoto, M. Fukui, S. Nakamura. Japanese Journal of Applied Physics,
Part 1, 39, pp. 2610-2613, (2000).
-
"UV/blue/green InGaN-based LEDs and laser diodes
grown on epitaxially latterally overgrown GaN" S. Nakamura. IEICE Transactions
on Electronics, E83-C, pp. 529-535, (2000).
-
"Blue InGaN-based laser diodes with an emission
wavelength of 450 nm" S. Nakamura, M. Senoh, S. Nagahama, N. Iwasa, T.
Matsushita, T. Mukai. Applied Physics Letters, 76, pp. 22-24, (2000).
-
"Control of GaN surface morphologies using plasma-assisted
molecular beam epitaxy" B. Heying, R. Averbeck, L. F. Chen and E. Haus,
H. Riechert, J. S. Speck. Journal of Applied Physics, 88, pp. 1855-1860,
(2000).
-
"Modeling of Threading Dislocation Reduction
in Growing GaN Layers" S. K. Mathis , A. E. Romanov , L. F. Chen , G. E.
Beltz , W. Pompe , J. S. Speck. Physica Status Solidi (a), 179,
pp. 125-145, (2000).
-
"A pump and probe study of photoinduced internal
field screening dynamics in an AlGaN/GaN single quantum-well structure"
A. Shikanai, T. Deguchi, T. Sota, T. Kuroda, A. Tackeuchi, S. Chichibu,
S. Nakamura. Applied Physics Letters, 76, pp. 454-456, (2000).
-
"High voltage operation (>80 V) of GaN bipolar
junction transistors with low leakage" J. B. Limb, H. Xing, B. Moran, L.
McCarthy, S. P. DenBaars, U. K. Mishra. Applied Physics Letters,
76, pp. 2457-2459, (2000).
-
"Photoreflectance spectra of excitonic polaritons
in GaN substrate prepared by lateral epitaxial overgrowth" S. F. Chichibu,
K. Torii, T. Deguchi, T. Sota, A. Setoguchi, H. Nakanishi, T. Azuhata,
S. Nakamura. Applied Physics Letters, 76, pp. 1576-1578, (2000).
-
"Evidence of localization effects in InGaN single-quantum-well
ultraviolet light-emitting diodes" S. F. Chichibu, K. Wada, J. Mullhauser,
O. Brandt, K. H. Ploog, T. Mizutani, A. Setoguchi, R. Nakai, M. Sugiyama,
H. Nakanishi, K. Korii, T. Deguchi, T. Sota, S. Nakamura. Applied Physics
Letters, 76, pp. 1671-1673, (2000).
p e o p l e § p u b l i c a t i o n s § l a b s § r e s e a r c h
s e m i n a r s § r e l a t e d l i n k s § c o n t a c t i n f o r m a t i o n
Last updated Tuesday, February 15, 2005
The Interdisciplinary Center for Wide Bandgap Semiconductors
The Solid State Lighting and Display Center
Copyright © 2001-2002