The Interdisciplinary Center for
Wide Bandgap Semiconductors
and
The Solid State Lighting & Display Center
P u b l i c a t i o n s
( 1 9 9 7 )
[ 2005 ] [ 2004 ] [ 2003 ] [ 2002 ] [ 2001
] [ 2000 ] [ 1999
] [ 1998 ] [ 1997 ]
[ 1996 ] [ 1995
- 1991 ]
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"Magnetic field dependent Hall data analysis
of electron transport in modulation-doped AlGaN/GaN heterostructures" Z.
Dziuba, J. Antoszewski, J. M. Dell, L. Faraone, P. Kozodoy, S. Keller,
B. Keller, S. P. DenBaars, U. K. Mishra. Journal of Applied Physics,
82, pp. 2996-3002, (1997).
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"Reconfigurable optical properties in InGaN/GaN
quantum wells" I. K. Shmagin, J. F. Muth, R. M. Kolbas, M. P. Mack, A.
C. Abare, S. Keller, L. A. Coldren, U. K. Mishra, S. P. DenBaars. Applied
Physics Letters, 71, pp. 1455-1457, (1997).
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"Short-channel Al/sub 0.5/Ga/sub 0.5/N-GaN MODFETs
with power density >3 W/mm at 18 GHz" Y.-F. Wu, B.P. Keller, P. Fini, J.
Pusl, M. Le, N. X. Nguyen, C. Nguyen, D. Widman, S. Keller, S. P. DenBaars,
U. K. Mishra.
Electronics Letters, 33, pp. 1742-1743, (1997).
-
"Gallium-nitride-based materials for blue to
ultraviolet optoelectronics devices" S. P. DenBaars. Proceedings of
the IEEE, 85, pp. 1740-1749, (1997).
-
"Absorption coefficient, energy gap, exciton
binding energy, and recombination lifetime of GaN obtained from transmission
measurements" J. F. Muth, J. H. Lee, I. K. Shmagin, R. M. Kolbas, H. C.
Casey, Jr., B. P. Keller, U. K. Mishra, S. P. DenBaars. Applied Physics
Letters, 71, pp. 2572-2574, (1997).
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"In/sub x/Ga/sub 1-x/N/Al/sub yx/Ga/sub1-x/N
violet light emitting diodes with reflective p-contacts for high single
sided light extraction" P. M. Mensz, P. Kellawon, T. Van Roijen, P. Kozodoy,
S. P. DenBaars. Electronics Letters, 33, pp. 2066-2068, (1997).
-
"Present status and future of blue LEDs and LDs"
S. Nakamura. Review of Laser Engineering, 25, pp. 850-854, (1997).
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"InGaN/GaN/AlGaN-based laser diodes with modulation-doped
strained-layer superlattices" S. Nakamura, M. Senoh, S. Nakahama, N. Iwasa,
T. Yamada, T. Matsushita, H. Kiyoku, Y. Sugimoto, T. Kozaki, H. Umemoto,
M. Sano, K. Chocho. Japanese Journal of Applied Physics, Part 2,
36, pp. L1568-L1571, (1997).
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"Recombination dynamics of localized excitons
in In(sub 0.20)Ga(sub 0.80)N-In(sub 0.50)Ga(sub 0.95)N multiple quantum
wells" Y. Narukawa, Y. Kawakami, S. Fujita, S. Fujita, S. Nakamura, Physical
Review B, 55, pp. R1938-R1941, (1997).
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"Longitudinal mode spectra and ultrashort pulse
gerneration of InGaN multiquantum well structure" S. Nakamura, M. Senoh,
S. Nagahama, N. Iwasa, T. Yamada, T. Matsushita, Y. Sugimoto, H. Kiyoku.
Applied
Physics Letters, 70, pp. 616-618, (1997).
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"Room-temperature continuous wave operation of
InGaN multi-quantum-well-structure laser diode with a long lifetime" S.
Nakamura, M. Senoh, S. Nagahama, T. Iwasa, T. Yamada, T. Matsushita, Y.
Sugimoto, H. Kiyoku. Applied Physics Letters, 70, pp. 868-870, (1997).
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"Blue-green light-emitting diodes and violet
laser diodes" S. Nakamura.
MRS Bulletin, 22, pp. 29-35, (1997).
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"Homoepitaxial growth of GaN under Ga-stable
and N-stable conditions by plasma-assisted molecular beam epitaxy" E. J.
Tarsa, B. Heying, X. H. Wu, P. Fini, S. P. DenBaars, J. S. Speck. Journal
of Applied Physics, 82, pp. 5472-5479, (1997).
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"Room-temperature continuous-wave operation of
InGaN multi-quantum-well structure laser diodes with a lifetime of 27 hours"
S. Nakamura, M. Senoh, S. Nagahama, N. Iwasa, T. Yamada, T. Matsushita,
Y. Sugimoto, H. Kiyoku.
Applied Physics Letters, 70, pp. 1417-1419,
(1997).
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"Exciton spectra of cubic and hexagonal GaN epitaxial
films" S. Chichibu, H. Okumura, S. Nakamura, G. Feuillet, T. Azuhata, T.
Sota, S. Yoshida.
Japanese Journal of Applied Physics, 36, pp. 1976-1983,
(1997).
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"Characteristics of Indium-Gallium-Nitride Multiple-Quantum-Well
Blue Laser Diodes Grown by MOCVD" M. P. Mack, A. Abare, M. Aizcorbe, Peter
Kozodoy , S. Keller, U. K. Mishra, L. Coldren, S. DenBaars. MRS Internet
Journal Nitride Semiconductor Research, 2, 41, (1997).
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"GaN-based blue/green semiconductor laser" IEEE
Journal of Selected Topics in Quantum Electronics, 36, pp. 435-442,
(1997).
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"Role of self-formed InGaN quantum dots for exciton
localization in the purple laser diode emitting at 420nm" Y. Narukawa,
Y. Kawakami, M. Funato, Sz. Fujita, Sg. Fujita, S. Nakamura. Applied
Physics Letters, 70, pp. 981-983, (1997).
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"Subband emission of InGaN multi-quantum-well
laser diodes under room temperature continuous wave operation" S. Nakamura,
M. Senoh, S. Nagahama, N. Iwasa, T. Yamada, T. Matsushita, Y. Sugimoto,
H. Kiyoku. Applied Physics Letters, 70, pp. 2753-2755, (1997).
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"Luminescence from localized states in InGaN
epilayers" S. Chichibu, T. Azuhata, T. Sota, S. Nakamura. Applied Physics
Letters, 70, pp. 2822-2824, (1997).
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"InGaN-based blue laser diodes" S. Nakamura.
IEEE
Journal of Selected Topics in Quantum Electronics, 3, pp. 712-718,
(1997).
-
"Success story with blue LEDs" S. Nakamura. Science
Journal, 67, (1997).
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"High –power, long-lifetime InGaN multi-quantum-well-structure
laser diodes" S. Nakamura, M. Senoh, S. Nagahama, N. Iwasa, T. Yamada,
T. Matsushita, Y. Sugimoto, H. Kiyoku. Japanese Journal of Applied Physics,
36, pp. L1059-L1061, (1997).
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"InGaN quantum-well structure blue LEDs and LDs"
S. Nakamura. Journal of Luminescence, 72-74, pp. 55-58, (1997).
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"Present and future aspects of blue light emitting
devices" S. Nakamura.
Applied Surface Science, 113-114, pp. 689-697,
(1997).
-
"First III-V-nitride-based violet laser diodes"
S. Nakamura. Journal of Crystal Growth, 170, pp. 11-15, (1997).
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"Electron beam pumped MQW InGaN/GaN laser" V.
I. Kozlovsky, A. B. Krysa, Y. K. Skyasyrsky, Y. M. Popov, A. Abare, M.
P. Mack, S. Keller, U. K. Mishra, L. Coldren, S. DenBaars, M. D. Tiberi,
T. George. MRS Internet Journal Nitride Semiconductor Research,
2, 38, (1997).
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"Characteristics of indium-gallium-nitride multiple
quantum well blue laser diodes grown ny MOCVD" M. P. Mack, A. Abare, M.
Aizcorbe, P. Kozodoy, S. Keller, U. K. Mishra, L. Coldren, S. DenBaars.
MRS
Internet Journal Nitride Semiconductor Research, 2, 41, (1997).
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"Ballistic electron emission microscopy study
of transport in GaN thin films" E. G. Brazel, M. A. Chin, V. Narayanamurti,
D. Kapolnek, E. J. Tarsa, S. P. DenBaars. Applied Physics Letters,
70, pp. 330-332, (1997).
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"GaN/AlGaN MODFET with 80 GHz f/sub max/ and
>100 V gate-drain breakdown voltage" N. X. Nguyen, B. P. Keller, S. Keller,
Y.-F. Wu, M. Le, C. Nguyen, S. P. DenBaars, U. K. Mishra, D. Grider. Electronics
Letters, 33, pp. 334-335, (1997).
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"Observation of lasing from photopumped InGaN/GaN
heterostructures in an edge emitting configuration" I. K. Shmagin, J. F.
Muth, R. M. Kolbas, S. Krishnankutty, S. Keller, U. K. Mishra, S. P. DenBaars.
Journal
of Applied Physics, 81, pp. 2021-2023, (1997).
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"Accurate mobility and carrier concentration
analysis for GaN" D. C. Look, J. R. Sizelove, S. Keller, Y. F. Wu, U. K.
Mishra, S. P. DenBaars. Solid State Communications, 102, pp. 297-300,
(1997).
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"Femtosecond studies of carrier dynamics in InGaN"
C.-K. Sun, F. Vallee, S. Keller, J. E. Bowers, S. P. DenBaars. Applied
Physics Letters, 70, pp. 2004-2006, (1997).
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"Gain spectroscopy on InGaN/GaN quantum well
diodes" M. Kuball, E. S. Jeon, Y.-K. Song, A. V. Nurmikko, P. Kozodoy,
A. Abare, S. Keller, L. A. Coldren, U. K. Mishra, S. P. DenBaars, D. A.
DenBaars. Applied Physics Letters, 70, pp. 2580-2582, (1997).
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"White light from InGaN/conjugated polymer hybrid
light-emitting diodes" F. Hide, P. Kozodoy, S. P. DenBaars, A. J. Heeger.
Applied
Physics Letters, 70, pp. 2664-2666, (1997).
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"Gallium nitride based semiconductors for short
wavelength optoelectronics" S. P. DenBaars. International Journal of
High Speed Electronics and Systems, 8, pp. 265-282, (1997).
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"Well width dependent studies of InGaN-GaN single
quantum wells using time-resolved photoluminescence techniques" C.-K. Sun,
S. Keller, T.-L. Chiu, G. Wang, M. S. Minsky, J. E. Bowers, S. P. DenBaars.
IEEE
Journal of Selected Topics in Quantum Electronics, 3, pp. 731-738,
(1997).
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"Bias dependent microwave performance of AlGaN/GaN
MODFETs up to 100V" Y.-F. Wu, S. Keller, P. Kozodoy, B. P. Keller, P. Parikh,
D. Kapolnek, S. P. DenBaars, U. K. Mishra. IEEE Electron Device Letters,
18, pp. 290-292, (1997).
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"Time-resolved photoluminescence studies of InGaN/GaN
single-quantum-wells at room temperature" C.-K. Sun, T.-L. Chiu, S. Keller,
G. Wang, M. S. Minsky, S. P. DenBaars, J. E. Bowers. Applied Physics
Letters, 71, pp. 425-427, (1997).
-
"Short channel AlGaN/GaN MODFETs with 50-GHz
/sub T/ and 1.7-W/mm output-power at 10 GHz" Y.-F. Wu, B. P. Keller, S.
Keller, N. X. Nguyen, M. Le, C. Nguyen, T. J. Jenkins, L. T. Kehias, S.
P. DenBaars, U. K. Mishra. IEEE Electron Device Letters, 18, pp.
438-440, (1997).
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"First laser-diodes fabricated from III-V nitride
based materials" S. Nakamura.
Materials Science and Engineering B,
43, pp. 258-264, (1997).
-
"III-V nitride based light-emitting devices"
S. Nakamura. Solid State Communications, 102, pp. 237-248, (1997).
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"RT-CW operation of InGaN multi-quantum-well
structure laser diodes" S. Nakamura. Materials Science and Engineering
B, 50, pp. 277-284, (1997).
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"Group III-V nitride-based ultraviolet blue-green-yellow
light-emitting diodes and laser diodes" S. Nakamura. Semiconductors
& Semimetals, 48, pp. 391-443, (1997).
-
"Characteristics of RT-CW operated InGaN multi-quantum-well-structure
laser diodes" S. Nakamura. MRS Internet Journal Nitride Semiconductor
Research, 2, (1997).
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"Nanosecond pump-and-probe study of wurtzite
GaN" T. Deguchi, A. Shikanai, T. Sota, S. Chichibu, N. Sarukura, H. Ohtaka,
T. Yamanaka, S. Nakamura.
Materials Science and Engineering B, 50,
pp. 180-182, (1997).
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"Gain spectra in cw InGaN/GaN MQW laser diodes"
T. Deguchi, T. Azuhata, T. Sota, S. Chichibu, S. Nakamura. Materials
Science and Engineering B, 50, pp. 251-255, (1997).
-
"Photoluminescence characteristics of GaN/InGaN/GaN
quantum wells" Journal of Electronic Materials, 26, pp. 325-329,
(1997).
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"Recombination dynamics of localized excitons
in self-formed InGaN quantum dots" Y. Kawakami, Y. Narukawa, K. Sawada,
S. Saijo, Sz. Fujita, Sg. Fujita, S. Nakamura. Materials Science and
Engineering B, 50, pp. 256-263, (1997).
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"Spectra of superbright blue and green InGaN/AlGaN/GaN
light-emitting diodes" V. E. Kudryashov, A. N. Turkin, A. E. Yunovich,
K. G. Zolina, S. Nakamura.
Journal of the European Ceramics Society,
17, pp. 2033-2037, (1997).
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"Failure of the modal gain model in GaN based
laser diode" G. Mohs, T. Aoki, M. Nagai, T. Shimano, M. Kuwata-Gonokami,
S. Nakamura. Solid State Communications, 104, pp. 643-648, (1997).
-
"Spatially resolved cathodoluminescence spectra
of InGaN quantum wells" S. Chichibu, K. Wada, S. Nakamura. Applied Physics
Letters, 71, pp. 2346-2348, (1997).
-
"Room-temperature CW operation of GaN based laser
diodes" S. Nakamura.
Review of Laser Engineering, 25, pp. 498-503,
(1997).
-
"Urbach-Martienssen tails in a wurtzite GaN epilayer"
S. Chichibu, T. Mizutani, T. Shioda, H. Nakanishi, T. Deguchi, T. Azuhata,
T. Sota, S. Nakamura.
Applied Physics Letters, 70, pp. 3440-3442,
(1997).
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"Observation of coreless dislocations in alpha-GaN"
D. Cherns, W. T. Young, J. W. Steeds, F. A. Ponce, S. Nakamura. Journal
of Crystal Growth, (178), pp. 201-206, (1997).
-
"Paramagnetic resonance in GaN-based single quantum
wells" W. E. Carlos, S. Nakamura. Applied Physics Letters, 70, pp.
2019-2021, (1997).
-
"Brillouin scattering study of gallium nitride:
elastic stiffness constants" M. Yamaguchi, T. Yagi, T. Azuhata, T. Sota,
K. Suzuki, S. Chichibu, S. Nakamura. Journal of Physics: Condensed Matter,
9, pp. 241-248, (1997).
-
"Biaxial strain dependence of exciton resonance
energies in wurtzite GaN" A. Shikanai, T. Azuhata, T. Sota, S. Chichibu,
A. Kuramata, K. Horino, S. Nakamura. Journal of Applied Physics,
81, pp. 417-424, (1997).
p e o p l e § p u b l i c a t i o n s § l a b s § r e s e a r c h
s e m i n a r s § r e l a t e d l i n k s § c o n t a c t i n f o r m a t i o n
Last updated Tuesday, February 15, 2005
The Interdisciplinary Center for Wide Bandgap Semiconductors
The Solid State Lighting and Display Center
Copyright © 2001-2002